BCPA94 datasheet(1/2 Pages) SECOS

No de pièce	BCPA94

Description	PNP Silicon Epitaxial Planar Transistor

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Fabricant	SECOS [SeCoS Halbleitertechnologie GmbH]

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BCPA94

-0.5 A, -400 V

PNP Silicon Epitaxial Planar Transistor

Elektronische Bauelemente

11-Jun-2010 Rev. B

Page 1 of 2

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

A94



C

E

B

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

DESCRIPTION

The BCPA94 is designed for application requires high voltage.

FEATURES



High Voltage：VCEO=400V (min) at IC=1mA



High Current gain：IC=300mA at 25°C



Complementary with BCPA44

MARKING

ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)

Parameter

Symbol

Ratings

Unit

Collector-Base Voltage

VCBO

-400

V

Collector-Emitter Voltage

VCEO

-400

V

Emitter-Base Voltage

VEBO

-6

V

Collector Current (DC)

IC

-0.5

A

Total Power Dissipation

PD

1

W

Junction & Storage Temperature

TJ, TSTG

150, -55~150

°C

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Collector-base breakdown voltage

V(BR)CBO

-400

-

V

IC= -100A, IE=0

Collector-emitter breakdown voltage

V(BR)CEO

-400

-

V

IC= -1mA, IB=0

Emitter-base breakdown voltage

V(BR)EBO

-6

-

V

IE= -100A, IC=0

Collector cut-off current

ICBO

-

-100

nA

VCB= -400V, IE=0

Collector-emitter current

ICES

-

-500

nA

VCE= -400V, VBE=0

Emitter cut-off current

IEBO

-

-100

nA

VEB= -6V, IC=0

DC current gain *

hFE1

40

-

VCE= -10V, IC= -1mA

hFE2

50

-

300

VCE= -10V, IC= -10mA

hFE3

45

-

VCE= -10V, IC= -50mA

hFE4

20

-

VCE= -10V, IC= -100mA

Collector-emitter saturation voltage *

VCE(sat)1

-

-350

mV

IC= -1mA, IB= -0.1mA

VCE(sat)2

-

-500

IC= -10mA, IB= -1mA

VCE(sat)3

-

-750

IC= -50mA, IB= -5mA

Base-emitter saturation voltage *

VBE(sat)

-

-750

mV

IC= -10mA, IB= -1mA

* Pulse Test: Pulse Width ≦ 380μs, Duty Cycle≦2%

Date Code

SOT-89

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