IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXGK120N60B

IXGX120N60B

IXYS MOSFETs and IGBTs are covered by 4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

one or moreof the following U.S. patents:

4,850,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405B2

6,759,692

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

TO-264 AA ( IXGK) Outline

Dim.

Millimeter

Inches

Min.

Max.

Min.

Max.

A

4.82

5.13

.190

.202

A1

2.54

2.89

.100

.114

A2

2.00

2.10

.079

.083

b

1.12

1.42

.044

.056

b1

2.39

2.69

.094

.106

b2

2.90

3.09

.114

.122

c

0.53

0.83

.021

.033

D

25.91

26.16

1.020

1.030

E

19.81

19.96

.780

.786

e

5.46 BSC

.215 BSC

J

0.00

0.25

.000

.010

K

0.00

0.25

.000

.010

L

20.32

20.83

.800

.820

L1

2.29

2.59

.090

.102

P

3.17

3.66

.125

.144

Q

6.07

6.27

.239

.247

Q1

8.38

8.69

.330

.342

R

3.81

4.32

.150

.170

R1

1.78

2.29

.070

.090

S

6.04

6.30

.238

.248

T

1.57

1.83

.062

.072

Dim.

Millimeter

Inches

Min.

Max.

Min. Max.

A

4.83

5.21

.190

.205

A

1

2.29

2.54

.090

.100

A

2

1.91

2.16

.075

.085

b

1.14

1.40

.045

.055

b

1

1.91

2.13

.075

.084

b

2

2.92

3.12

.115

.123

C

0.61

0.80

.024

.031

D

20.80 21.34

.819

.840

E

15.75 16.13

.620

.635

e

5.45 BSC

.215 BSC

L

19.81 20.32

.780

.800

L1

3.81

4.32

.150

.170

Q

5.59

6.20

.220 0.244

R

4.32

4.83

.170

.190

1 - Gate

2, 4 - Collector

3 - Emitter

Terminals: 1 - Gate

2 - Collector

3 - Emitter

Back Side

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

g

fs

I

50

75

S

C

ies

11

nF

C

oes

V

680

pF

C

res

190

pF

Q

g

350

nC

Q

ge

I

72

nC

Q

gc

131

nC

t

d(on)

60

ns

t

ri

45

ns

E

on

2.4

mJ

t

d(off)

200

360

ns

t

fi

160

280

ns

E

off

5.5

9.6

mJ

t

d(on)

60

ns

t

ri

60

ns

E

on

4.8

mJ

t

d(off)

290

ns

t

fi

250

ns

E

off

8.7

mJ

R

thJC

0.19 °C/W

R

thCS

0.15

°C/W

Inductive Load, T

I

V

Note 2

Inductive Load, T

I

V

Note 2

Notes:

1. Pulse test, t

≤ 300μs, duty cycle, d ≤ 2%.

2. Switching times & energy losses may increase for higher V