IXGH32N90B2 datasheet(6/7 Pages) IXYS

No de pièce	IXGH32N90B2

Description	HiPerFAST IGBT B2-Class High Speed IGBTs

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Fabricant	IXYS [IXYS Corporation]

Site Internet	http://www.ixys.com

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IXYS reserves the right to change limits, test conditions, and dimensions.

IXGH 32N90B2

IXGT 32N90B2

Fig. 18. Dependence of Turn-off

Sw itching Tim e on Gate Resistance

350

375

400

425

450

475

500

525

550

46

8

10

1214161820

R G - Ohms

320

330

340

350

360

370

380

390

400

td(off)

tfi - - - - -

T J = 125ºC, VGE = 15V

VCE = 720V

IC = 32A, 16A

IC = 16A, 32A, 64A

Fig. 20. Dependence of Turn-off

Sw itching Time on Collector Current

100

150

200

250

300

350

400

450

500

15

20

25

30

35

40

45

50

55

60

65

I C - Amperes

td(off)

tfi - - - - -

RG =5Ω, VGE = 15V

VCE = 720V

TJ = 125ºC

TJ = 25ºC

Fig. 22. Dependence of Turn-off

Sw itching Tim e on Tem perature

100

150

200

250

300

350

400

25

35

45

55

65

75

85

95

105 115 125

T J - Degrees Centigrade

td(off)

tfi - - - - -

RG =5Ω , VGE = 15V

VCE = 720V

IC = 64A, 32A, 16A

Fig. 19. Dependence of Turn-on

Sw itching Time on Gate Resistance

15

20

25

30

35

40

45

46

8

10

12

14161820

R G - Ohms

0

30

60

90

120

150

180

td(on)

tri - - - - -

TJ = 125ºC, VGE = 15V

VCE = 720V

IC = 32A

IC = 16A

IC = 64A

Fig. 21. Dependence of Turn-on

Sw itching Tim e on Collector Current

10

12

14

16

18

20

22

24

26

28

30

10

20

30

40

50

60

70

I C - Amperes

0

10

20

30

40

50

60

70

80

90

100

td(on)

tri - - - -

RG =5Ω, VGE = 15V

VCE = 720V

TJ = 125ºC

TJ = 25ºC

Fig. 23. Dependence of Turn-on

Sw itching Time on Temperature

10

15

20

25

30

35

40

25

35

45

55

65

75

85

95 105 115 125

T J - Degrees Centigrade

0

25

50

75

100

125

150

td(on)

tri - - - - -

RG =5Ω , VGE = 15V

VCE = 720V

IC = 32A

IC = 64A

IC = 16A

Numéro de pièce similaire - IXGH32N90B2

Fabricant	No de pièce	Fiches technique	Description
IXYS Corporation	IXGH32N90B2D1	225Kb / 7P	HiPerFAST IGBT with Fast Diode

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Description similaire - IXGH32N90B2

Fabricant	No de pièce	Fiches technique	Description
IXYS Corporation	IXGH50N60B2	585Kb / 5P	HiPerFASTTM IGBT B2-Class High Speed IGBTs
	IXGP30N60C2	555Kb / 5P	HiPerFAST IGBT C2- Class High Speed IGBTs
	IXGA16N60B2	229Kb / 6P	HiPerFAST IGBTs B2-Class High Speed
	IXGA16N60B2D1	222Kb / 7P	HiPerFAST IGBTs B2-Class High Speed w/ Diode
	IXGA16N60C2	205Kb / 6P	HiPerFAST IGBTs C2-Class High Speed
	IXGA16N60C2D1	224Kb / 7P	HiPerFAST IGBTs C2-Class High Speed w/ Diode
	IXGH50N60C2	592Kb / 5P	HiPerFAST IGBT C2-Class High Speed IGBTs
	IXGH50N90B2	168Kb / 5P	HiPerFAST IGBT B2-Class High Speed IGBTs
	99161	514Kb / 6P	B2-Class High Speed IGBTs (Electrically Isolated Back Surface)
	IXGR50N60C2D1	511Kb / 6P	HiPerFAST IGBT with Diode C2-Class High Speed IGBTs

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IXGH32N90B2 Fiches technique(PDF) 6 Page - IXYS Corporation

IXGH32N90B2 Fiches technique(HTML) 6 Page - IXYS Corporation

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