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IXGH32N90B2 Fiches technique(PDF) 2 Page - IXYS Corporation

No de pièce IXGH32N90B2
Description  HiPerFAST IGBT B2-Class High Speed IGBTs
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Fabricant  IXYS [IXYS Corporation]
Site Internet  http://www.ixys.com
Logo IXYS - IXYS Corporation

IXGH32N90B2 Fiches technique(HTML) 2 Page - IXYS Corporation

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IXYS reserves the right to change limits, test conditions, and dimensions.
IXGH 32N90B2
IXGT 32N90B2
Symbol
Test Conditions
Characteristic Values
(T
J = 25°C, unless otherwise specified)
min.
typ. max.
g
fs
I
C
= I
C110 A; VCE = 10 V,
18
28
S
Pulse test, t
≤ 300 μs, duty cycle ≤ 2 %
C
ies
1790
pF
C
oes
V
CE = 25 V, VGE = 0 V, f = 1 MHz
121
pF
C
res
49
pF
Q
g
89
nC
Q
ge
I
C = IC110 , VGE = 15 V, VCE = 0.5 VCES
15
nC
Q
gc
34
nC
t
d(on)
20
n s
t
ri
22
n s
t
d(off)
260
400
n s
t
fi
150
n s
E
off
2.6
4.5 mJ
t
d(on)
20
n s
t
ri
22
n s
E
on
0.5
mJ
Note 1
3.8
mJ
t
d(off)
360
n s
t
fi
330
n s
E
off
5.75
mJ
R
thJC
0.42 K/W
R
thCS
(TO-247)
0.25
K/W
Inductive load, T
J = 25°
°°°°C
I
C = IC110 , VGE = 15 V
V
CE = 720 V, RG = Roff = 5 Ω
Inductive load, T
J = 125°
°°°°C
I
C = IC110 A, VGE = 15 V
V
CE = 720 V, RG = Roff = 5 Ω
TO-247 AD Outline
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
4.7
5.3
.185
.209
A
1
2.2
2.54
.087
.102
A
2
2.2
2.6
.059
.098
b
1.0
1.4
.040
.055
b
1
1.65
2.13
.065
.084
b
2
2.87
3.12
.113
.123
C
.4
.8
.016
.031
D
20.80
21.46
.819
.845
E
15.75
16.26
.610
.640
e
5.20
5.72
0.205 0.225
L
19.81
20.32
.780
.800
L1
4.50
.177
∅P
3.55
3.65
.140
.144
Q
5.89
6.40
0.232 0.252
R
4.32
5.49
.170
.216
S
6.15 BSC
242 BSC
e
∅ P
TO-268 Outline
Min. Recommended Footprint
(Dimensions in inches and mm)
Note 1: E
on measured with a DSEP 30-12A ultrafast diode clamp.
IXYS MOSFETs and IGBTs are covered by
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065B1
6,683,344
6,727,585
one or more of the following U.S. patents:
4,850,072
5,017,508
5,063,307
5,381,025
6,259,123B1
6,534,343
6,710,405B2
6,759,692
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
6771478B2


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