IXGE200N60B_04 datasheet(1/2 Pages) IXYS

No de pièce	IXGE200N60B

Description	HiPerFAST IGBT

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Fabricant	IXYS [IXYS Corporation]

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Symbol

Test Conditions

Maximum Ratings

V

CES

T

J

= 25

°C to 150°C

600

V

CGR

T

J

= 25

°C to 150°C; R

GE = 1 MΩ

600

V

GES

Continuous

±20

V

GEM

Transient

±30

V

I

C25

T

C = 25°C

160

A

I

L

Terminal Current Limit(RMS)

100

A

I

C90

T

C = 90°C96

A

I

CM

T

C = 25°C, 1 ms

400

A

SSOA

V

GE = 15 V, TVJ = 125°C, RG = 2.4 Ω

I

CM = 200

A

(RBSOA)

Clamped inductive load @ 0.8 V

CES

P

C

T

C = 25°C

416

W

T

J

-40 ... +150

°C

T

JM

150

°C

T

stg

-40 ... +150

°C

V

ISOL

50/60 Hz

t = 1 min

2500

V~

I

ISOL ≤ 1 mA

t = 1 s

3000

V~

M

d

Mounting torque

1.5/13 Nm/lb.in.

Terminal connection torque (M4)

1.5/13 Nm/lb.in.

Weight

19

g

Features

•Conforms to SOT-227B outline

•Isolation voltage 3000 V~

•Very high current, fast switching IGBT

•Low V

CE(sat)

- for minimum on-state conduction

losses

•MOS Gate turn-on

- drive simplicity

•Low collector-to-case capacitance

(< 50 pF)

•Low package inductance (< 5 nH)

- easy to drive and to protect

Applications

•AC motor speed control

•DC servo and robot drives

•DC choppers

•Uninterruptible power supplies (UPS)

•Switch-mode and resonant-mode

power supplies

Advantages

•Easy to mount with 2 screws

•Space savings

•High power density

E

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, unless otherwise specified)

min.

typ.

max.

BV

CES

I

C

= 1 mA , V

GE = 0 V

600

V

GE(th)

I

C

= 1 mA, V

CE = VGE

2.5

5.5

V

I

CES

V

CE = VCES

T

J =

25

°C

200

µA

V

GE = 0 V

T

J = 125°C

2

mA

I

GES

V

CE = 0 V, VGE = ±20 V

±400

nA

V

CE(sat)

I

C

= 120A, V

GE = 15 V

2.3

V

DS98911B(09/04)

HiPerFASTTM IGBT

IXGE 200N60B

V

CES

= 600 V

I

C25

= 160 A

V

CE(sat)

= 2.3 V

t

fi

= 160ns

G

E

C

G = Gate, E = Emitter, C = Collector

either emitter terminal can be

used as Main or Kelvin Emitter

E

ISOPLUS 227TM (IXGE)

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