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IXGA16N60B2 Fiches technique(PDF) 5 Page - IXYS Corporation

No de pièce IXGA16N60B2
Description  HiPerFAST IGBTs B2-Class High Speed
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Fabricant  IXYS [IXYS Corporation]
Site Internet  http://www.ixys.com
Logo IXYS - IXYS Corporation

IXGA16N60B2 Fiches technique(HTML) 5 Page - IXYS Corporation

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Fig. 12. Inductive Switching Energy Loss vs.
Gate Resistance
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
20
30
40
50
60
70
80
90
100
RG - Ohms
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
Eoff
Eon - - - -
TJ = 125ºC , VGE = 15V
VCE = 400V
I C = 12A
I C = 24A
Fig. 15. Inductive Turn-off Switching Times vs.
Gate Resistance
100
110
120
130
140
150
160
170
180
190
20
30
40
50
60
70
80
90
100
RG - Ohms
60
90
120
150
180
210
240
270
300
330
t f i
td(off) - - - -
TJ = 125ºC, VGE = 15V
VCE = 400V
I C = 24A
I C = 12A
Fig. 13. Inductive Switching Energy Loss vs.
Collector Current
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
12
13
14
15
16
17
18
19
20
21
22
23
24
IC - Amperes
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
Eoff
Eon - - - -
RG = 22Ω , VGE = 15V
VCE = 400V
TJ = 125ºC
TJ = 25ºC
Fig. 14. Inductive Switching Energy Loss vs.
Junction Temperature
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
25
35
45
55
65
75
85
95
105
115
125
TJ - Degrees Centigrade
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
Eoff
Eon - - - -
RG = 22Ω , VGE = 15V
VCE = 400V
I C = 12A
I C = 24A
Fig. 16. Inductive Turn-off Switching Times vs.
Collector Current
40
60
80
100
120
140
160
180
200
12
13
14
15
16
17
18
19
20
21
22
23
24
IC - Amperes
40
60
80
100
120
140
160
180
200
t f i
td(off) - - - -
RG = 22Ω , VGE = 15V
VCE = 400V
TJ = 125ºC
TJ = 25ºC
Fig. 17. Inductive Turn-off Switching Times vs.
Junction Temperature
40
60
80
100
120
140
160
180
25
35
45
55
65
75
85
95
105
115
125
TJ - Degrees Centigrade
40
60
80
100
120
140
160
180
t f i
td(on) - - - -
RG = 22Ω , VGE = 15V
VCE = 400V
I C = 24A, 12A
IXGA16N60B2
IXGP16N60B2


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