JCS7N65F-O-F-N-B datasheet(3/8 Pages) JSMC

No de pièce	JCS7N65F-O-F-N-B

Description	N-CHANNEL MOSFET

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Fabricant	JSMC [JILIN SINO-MICROELECTRONICS CO., LTD.]

Site Internet	http://www.hwdz.com.cn

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3 / 8 page

R

JCS7N65F

版本：201004A

3/8

电特性

ELECTRICAL CHARACTERISTICS

项

目

Parameter

符

号

Symbol

测试条件

Tests conditions

最小

Min

典型

Typ

最大

Max

单位

Units

关态特性

Off –Characteristics

漏－源击穿电压

Drain-Source Voltage

BVDSS

ID=250μA, VGS=0V

650

-

V

击穿电压温度特性

Breakdown Voltage Temperature

Coefficient

ΔBVDSS/Δ

TJ

ID=250μA,

referenced

to

25℃

-

0.65

-

V/℃

VDS=650V,VGS=0V, TC=25℃

-

10

μA

零栅压下漏极漏电流

Zero Gate Voltage Drain Current

IDSS

VDS=520V,

TC=125℃

-

100

μA

正向栅极体漏电流

Gate-body leakage current,

forward

IGSSF

VDS=0V, VGS =30V

-

100

nA

反向栅极体漏电流

Gate-body leakage current,

reverse

IGSSR

VDS=0V, VGS =-30V

-

-100

nA

通态特性

On-Characteristics

阈值电压

Gate Threshold Voltage

VGS(th)

VDS = VGS , ID=250μA

2.0

-

4.0

V

静态导通电阻

Static Drain-Source

On-Resistance

RDS(ON)

VGS =10V , ID=3.5A

-

1.15 1.35

Ω

正向跨导

Forward Transconductance

gfs

VDS = 40V, ID=3.5A（note 4） -

8.2

-

S

动态特性

Dynamic Characteristics

输入电容

Input capacitance

Ciss

-

1380 1800

pF

输出电容

Output capacitance

Coss

-

115

150

pF

反向传输电容

Reverse transfer capacitance

Crss

VDS=25V,

VGS =0V,

f=1.0MHZ

-

23

30

pF

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