FB125-C1000G datasheet(1/3 Pages) EIC

No de pièce	FB125-C1000G

Description	FAST RECOVERY GLASS

Download	3 Pages

Scroll/Zoom	100%

Fabricant	EIC [EIC discrete Semiconductors]

Site Internet	http://www.eicsemi.com

Logo

1 / 3 page

FB40 - FB380/C 1000G

FAST RECOVERY GLASS

PASSIVATED BRIDGE RECTIFIERS

PRV : 100 - 900 Volts

Io : 1.0 Amperes

FEATURES :

* Glass passivated chip

* High case dielectric strength

* High surge current capability

* High reliability

* Low reverse current

* Low forward voltage drop

* Fast switching for high efficiency

* Ideal for printed circuit board

MECHANICAL DATA :

* Case : Reliable low cost construction

utilizing molded plastic technique

* Epoxy : UL94V-O rate flame retardant

* Terminals : Plated leads solderable per

MIL-STD-202, Method 208 guaranteed

* Polarity : Polarity symbols marked on case

* Mounting position : Any

* Weight : 1.29 grams

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating at 25

°C ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

SYMBOL

FB40-C

1000G

FB80-C

1000G

FB125-C

1000G

FB250-C

1000G

FB380-C

1000G

UNIT

Maximum Recurrent Peak Reverse Voltage

VRRM

100

200

300

600

900

V

Maximum RMS Input Voltage R+C -Load

VRMS

40

80

125

250

380

V

Maximum DC Blocking Voltage

VDC

100

200

300

600

900

V

Maximum Average Forward Current For

Free Air Operation at Tc = 45

°C R+L -Load

IF(AV)

1.2

A

C -Load

1.0

Peak Forward Surge Current Single half sine wave

on rated load (JEDEC Method) at TJ = 125

°C

IFSM

30

A

Rating for fusing at TJ = 125

°C ( t < 100 ms.)

I

2t

10

A

2S

Maximum Series Resistor C-Load VRMS =

± 10%

Rt

1.0

2.0

4.0

8.0

12.0

Ω

Maximum load Capacitance

+ 50%

-10%

CL

5000

2500

1000

500

200

µF

Maximum Forward Voltage per Diode at IF = 1.0 A

VF

1.3

V

Maximum Reverse Current at Rated Repetitive

Peak Voltage per Diode

IR

10

µA

Maximum Reverse Recovery Time (Note 1)

Trr

150

250

500

ns

Typical Thermal Resistance (Note 2)

R

θJA

36

°C/W

Operating Junction Temperature Range

TJ

- 50 to + 125

°C

Storage Temperature Range

TSTG

- 50 to + 125

°C

Notes :

1 ) Measured with IF = 0.5 Amp., IR = 1 Amp., Irr = 0.25 Amp.

2 ) Thermal resistance from Junction to Ambient at 0.375" (9.5 mm) lead length P.C. Board with, 0.22" x 0.22" (5.5 x 5.5 mm)

copper Pads.

Page 1 of 3

Rev. 02 : March 25, 2005

RATING

WOB

-

0.39 (10.0)

0.31 (7.87)

0.034 (0.86)

0.028 (0.71)

AC

+

0.22 (5.59)

0.18 (4.57)

0.22 (5.59)

0.18 (4.57)

0.22 (5.59)

0.18 (4.57)

+

-

AC

1.00 (25.4)

MIN.

Dimension in inches and (millimeter)

* Pb / RoHS Free

Numéro de pièce similaire - FB125-C1000G

Fabricant	No de pièce	Fiches technique	Description
EIC discrete Semiconduc...	FB125-C1000G	45Kb / 2P	FAST RECOVERY GLASS PASSIVATED BRIDGE RECTIFIERS

More results

Description similaire - FB125-C1000G

Fabricant	No de pièce	Fiches technique	Description
EIC discrete Semiconduc...	F2W005G	60Kb / 2P	FAST RECOVERY GLASS
	FW005G	82Kb / 2P	FAST RECOVERY GLASS
	FWL005G	83Kb / 2P	FAST RECOVERY GLASS
HY ELECTRONIC CORP.	FR201G	38Kb / 2P	GLASS FAST RECOVERY RECTIFIERS
	FR101G	34Kb / 2P	GLASS FAST RECOVERY RECTIFIERS
	FR301G	38Kb / 2P	GLASS FAST RECOVERY RECTIFIERS
	FR151G	38Kb / 2P	GLASS FAST RECOVERY RECTIFIERS
	FR601G	35Kb / 2P	GLASS FAST RECOVERY RECTIFIERS
Shanghai Sunrise Electr...	FR301G	15Kb / 1P	GLASS PASSIVATED FAST RECOVERY RECTIFIER
Shanghai Lunsure Electr...	1N4933G	136Kb / 2P	FAST RECOVERY GLASS PASSIVATED RECTIFIER

More results

FB125-C1000G Fiches technique(PDF) 1 Page - EIC discrete Semiconductors

FB125-C1000G Fiches technique(HTML) 1 Page - EIC discrete Semiconductors

Numéro de pièce similaire - FB125-C1000G

Description similaire - FB125-C1000G

Html Pages

1 2 3

Fiches technique Télécharger

Lien URL