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Moteur de recherche de fiches techniques de composants électroniques |
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Moteur de recherche de fiches techniques de composants électroniques |
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H57V2562GTR-75C Fiches technique(PDF) 10 Page - Hynix Semiconductor |
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H57V2562GTR-75C Fiches technique(HTML) 10 Page - Hynix Semiconductor |
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10 / 23 page  Rev 1.0 / Aug. 2009 10 111 Synchronous DRAM Memory 256Mbit H57V2562GTR Series DC CHARACTERISTICS II (TA= 0 to 70oC) Note: 1. IDD1 and IDD4 depend on output loading and cycle rates. Specified values are measured with the output open. 2. Min. of tRC (Refresh RAS cycle time) is shown at AC CHARACTERISTICS II 3. H57V2562GTR-XXC Series: Normal, H57V2562GTR-XXL Series: Low Power Parameter Symbol Test Condition Speed (MHz) Unit Note 200 166 133 Operating Current IDD1 Burst length=1, One bank active tRC ≥ tRC(min), IOL=0mA 110 90 70 mA 1 Precharge Standby Current in Power Down Mode IDD2P CKE ≤ VIL(max), tCK = 15ns 2 mA IDD2PS CKE ≤ VIL(max), tCK = ∞ 2mA Precharge Standby Current in Non Power Down Mode IDD2N CKE ≥ VIH(min), CS ≥ VIH(min), tCK = 15ns Input signals are changed one time during 2clks. All other pins ≥ VDD-0.2V or ≤ 0.2V 15 mA IDD2NS CKE ≥ VIH(min), tCK = ∞ Input signals are stable. 8 Active Standby Current in Power Down Mode IDD3P CKE ≤ VIL(max), tCK = 15ns 5 mA IDD3PS CKE ≤ VIL(max), tCK = ∞ 5 Active Standby Current in Non Power Down Mode IDD3N CKE ≥ VIH(min), CS ≥ VIH(min), tCK = 15ns Input signals are changed one time during 2clks. All other pins ≥ VDD-0.2V or ≤ 0.2V 28 mA IDD3NS CKE ≥ VIH(min), tCK = ∞ Input signals are stable. 20 Burst Mode Op- erating Current IDD4 tCK ≥ tCK(min), IOL=0mA All banks active 120 100 80 mA 1 Auto Refresh Current IDD5 tRC ≥ tRC(min), All banks active 180 160 140 mA 2 Self Refresh Current IDD6 CKE ≤ 0.2V Normal 2 mA 3 Low Power 1 |
Numéro de pièce similaire - H57V2562GTR-75C |
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Description similaire - H57V2562GTR-75C |
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