2N2222A datasheet(2/3 Pages) COMSET

No de pièce	2N2222A

Description	SILICON PLANAR EPITAXIAL TRANSISTORS

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Fabricant	COMSET [Comset Semiconductor]

Site Internet	http://comset.halfin.com

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NPN 2N2222 – 2N2222A

PNP 2N2907 – 2N2907A

COMSET SEMICONDUCTORS

3

/3

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

Min Typ Mx

Unit

VCB=60 V, IE=0V

2N2222A

ICBO

Collector Cutoff Current

VCB=50 V, IE=0V

2N2222

-

10

nA

VCB=60 V, IE=0V, Tj=150°C

2N2222A

ICBO

Collector Cutoff Current

VCB=50 V, IE=0V, Tj=150°C

2N2222

-

10

µA

2N2222A

IEBO

Emitter Cutoff Current

VBE=3.0 V, IC=0

2N2222

-

10

nA

2N2222A

ICEX

Collector Cutoff Current

VCE=60 V, -VBE=3V

2N2222

-

10

nA

2N2222A

40

-

VCEO

Collector Emitter Breakdown

Voltage

IC=10 mA, IB=0

2N2222

30

-

V

2N2222A

75

-

VCBO

Collector Base Breakdown

Voltage

IC=10 µA, IE=0

2N2222

60

-

V

2N2222A

6

-

VEBO

Emitter Base Breakdown

Voltage

IE=10 µA, IC=0

2N2222

5

-

V

2N2222A

IC=0.1 mA, VCE=10 V

2N2222

35

-

2N2222A

IC=1 mA, VCE=10 V

2N2222

50

-

2N2222A

IC=10 mA, VCE=10 V

2N2222

75

-

2N2222A

35

-

IC=10 mA, VCE=10 V

Tamb = -55°

2N2222

-

2N2222A

IC=150 mA, VCE=1 V (1)

2N2222

50

-

2N2222A

IC=150 mA, VCE=10 V (1)

2N2222

100

-

2N2222A

40

-

hFE

DC Current Gain

IC=500 mA, VCE=10 V (1)

2N2222

30

-

2N2222A

-

0.3

IC=150 mA, IB=15 mA

2N2222

-

0.4

2N2222A

-

1

VCE(SAT)

Collector-Emitter saturation

Voltage (1)

IC=500 mA, IB=50 mA

2N2222

-

1.6

2N2222A

-

1.2

IC=150 mA, IB=15 mA

2N2222

-

1.3

2N2222A

-

2

VBE(SAT)

Base-Emitter saturation

Voltage (1)

IC=500 mA, IB=50 mA

2N2222

-

2.6

V

Symbol

Ratings

Test Condition(s)

Min Typ Mx

Unit

2N2222A

250

-

fT

Transition frequency

IC=20 mA, VCE=20 V

f= 100MHz

2N2222

300

-

MHz

2N2222A

3

-

hfe

Small signal current gain

IC=1 A, VCE=2.0 V

2N2222

2.5

-

Numéro de pièce similaire - 2N2222A

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