2SB653 datasheet(2/3 Pages) SAVANTIC

No de pièce	2SB653

Description	Silicon PNP Power Transistors

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Fabricant	SAVANTIC [Savantic, Inc.]

Site Internet	http://www.svntc.com

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SavantIC Semiconductor

Product Specification

2

Silicon PNP Power Transistors

2SB653

CHARACTERISTICS

Tj=25

unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V(BR)CEO

Collector-emitter breakdown voltage

IC=-30mA ;IB=0

-120

V

V(BR)CBO

Collector-base breakdown voltage

IC=-1mA ;IE=0

-120

V

V(BR)EBO

Emitter-base breakdown voltage

IE=-1mA ;IC=0

-6

V

VCEsat

Collector-emitter saturation voltage

IC=-3A; IB=-0.3A

-1.5

V

ICBO

Collector cut-off current

VCB=-120V; IE=0

-0.1

mA

IEBO

Emitter cut-off current

VEB=-6V; IC=0

-0.1

mA

hFE

DC current gain

IC=-1A ; VCE=-5V

35

200

fT

Transition frequency

IC=-1A ; VCE=-5V

20

MHz

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