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2SJ160 Fiches technique(PDF) 2 Page - Renesas Technology Corp

No de pièce 2SJ160
Description  Silicon P Channel MOS FET
Download  6 Pages
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Fabricant  RENESAS [Renesas Technology Corp]
Site Internet  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SJ160 Fiches technique(HTML) 2 Page - Renesas Technology Corp

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2SJ160, 2SJ161, 2SJ162
Rev.2.00 Sep 07, 2005 page 2 of 5
Absolute Maximum Ratings
(Ta = 25
°C)
Item
Symbol
Value
Unit
2SJ160
–120
2SJ161
–140
Drain to source voltage
2SJ162
VDSX
–160
V
Gate to source voltage
VGSS
±15
V
Drain current
ID
–7
A
Body to drain diode reverse drain current
IDR
–7
A
Channel dissipation
Pch
Note 1
100
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
1. Value at Tc = 25
°C
Electrical Characteristics
(Ta = 25
°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
2SJ160
–120
V
2SJ161
–140
V
Drain to source breakdown
voltage
2SJ162
V (BR) DSX
–160
V
ID = –10 mA, VGS = 10 V
Gate to source breakdown voltage
V (BR) GSS
±15
V
IG =
±100 µA, VDS = 0
Gate to source cutoff voltage
VGS (off)
–0.15
–1.45
V
ID = –100 mA, VDS = –10 V
Drain to source saturation voltage
VDS (sat)
–12
V
ID = –7 A, VGS = 0
Note 2
Forward transfer admittance
|yfs|
0.7
1.0
1.4
S
ID = –3 A, VDS = –10 V
Note 2
Input capacitance
Ciss
900
pF
Output capacitance
Coss
400
pF
Reverse transfer capacitance
Crss
40
pF
VGS = 5 V, VDS = –10 V,
f = 1 MHz
Turn-on time
ton
230
ns
Turn-off time
toff
110
ns
VDD = –20 V ID = –4 A
Note:
2. Pulse test


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