BYT60P-1000 datasheet(4/7 Pages) STMICROELECTRONICS

No de pièce	BYT60P-1000

Description	FAST RECOVERY RECTIFIER DIODES

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1

10

100

200

0

20

40

60

80

100

VR(V)

C(pF)

F=1MHz

Tj=25

°C

Fig. 7: Junctioncapacitance versus reverse voltage

applied (typical values, per diode for ISOTOP).

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

1

10

100

500

VFM(V)

IFM(A)

Typical values

Tj=100

°C

Tj=25

°C

Tj=100

°C

Fig. 6: Forward voltage drop versus forward

current (maximum values, per diode for ISOTOP).

1E-3

1E-2

1E-1

1E+0

0.1

0.2

0.5

1.0

tp(s)

K=[Zth(j-c)/Rth(j-c)]

T

δ=tp/T

tp

Single pulse

δ = 0.1

δ = 0.2

δ = 0.5

Fig. 5-1: Relative variation of thermal impedance

junction to case versus pulse duration (per diode,

ISOTOP).

1E-3

1E-2

1E-1

1E+0

0

50

100

150

200

250

300

350

400

t(s)

IM(A)

Tc=60

°C

Tc=25

°C

IM

t

δ=0.5

Fig. 4-1: Non repetitive surge peak forward current

versus overload duration (SOD93).

1E-3

1E-2

1E-1

1E+0

0

50

100

150

200

250

300

350

400

Tc=50

°C

Tc=25

°C

t(s)

IM(A)

IM

t

δ=0.5

Fig. 4-2: Non repetitive surge peak forward current

versus overload duration (per diode, ISOTOP).

1E-3

1E-2

1E-1

1E+0

0.1

0.2

0.5

1.0

tp(s)

K=[Zth(j-c)/Rth(j-c)]

T

δ=tp/T

tp

Single pulse

δ = 0.1

δ = 0.2

δ = 0.5

Fig. 5-2: Relative variation of thermal impedance

junction to case versus pulse duration (SOD93).

BYT60P-1000 / BYT261PIV-1000

4/7

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