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Moteur de recherche de fiches techniques de composants électroniques |
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BYT60P-1000 Fiches technique(PDF) 3 Page - STMicroelectronics |
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BYT60P-1000 Fiches technique(HTML) 3 Page - STMicroelectronics |
3 / 7 page ![]() 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 50 100 150 200 250 300 350 400 450 500 IM(A) P=100W P=20W P=70W P=40W T δ=tp/T tp δ Fig. 2-1: Peak current versus form factor (per diode, ISOTOP). 0 25 50 75 100 125 150 0 10 20 30 40 50 60 70 Tamb( °C) IF(av)(A) Rth(j-a)=2.5 °C/W Rth(j-a)=Rth(j-c) ISOTOP SOD93 T δ=tp/T tp Fig. 3: Average forward current versus ambient temperature ( δ=0.5, per diode for ISOTOP). 0 10 20304050 6070 0 10 20 30 40 50 60 70 80 90 100 110 120 130 IF(av) (A) PF(av)(W) T δ=tp/T tp δ =1 δ = 0.5 δ = 0.2 δ = 0.1 δ = 0.05 Fig. 1-1: Average forward power dissipation versus average forward current (per diode, ISOTOP). 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 50 100 150 200 250 300 350 400 450 500 IM(A) P=100W P=20W P=70W P=40W T δ=tp/T tp δ Fig. 2-2: Peak current versus form factor (SOD93). 0 10 20304050 6070 0 10 20 30 40 50 60 70 80 90 100 110 120 130 IF(av) (A) PF(av)(W) T δ=tp/T tp δ =1 δ = 0.5 δ = 0.2 δ = 0.1 δ = 0.05 Fig. 1-2: Average forward power dissipation versus average forward current (SOD93). BYT60P-1000 / BYT261PIV-1000 3/7 |
Numéro de pièce similaire - BYT60P-1000 |
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Description similaire - BYT60P-1000 |
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