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Moteur de recherche de fiches techniques de composants électroniques |
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Moteur de recherche de fiches techniques de composants électroniques |
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STM32MP151AAA3T Fiches technique(PDF) 143 Page - STMicroelectronics |
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STM32MP151AAA3T Fiches technique(HTML) 143 Page - STMicroelectronics |
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143 / 245 page  DS12500 Rev 1 143/245 STM32MP151A Electrical characteristics 228 All timings are derived from tests performed under ambient temperature and VDD = 3.3 V. Table 26. Low-power mode wakeup timings Symbol Parameter Conditions (after wakeup) Typ(1) Max(1) Unit tWUCSLEEP_M PU MPU wakeup from CSleep, MCU in CSleep HSE 24 MHz, SYSRAM 31 TBD CPU clock cycles tWUCSTOP_MP U MPU wakeup from CStop, MCU in CStop HSI 64 MHz, SYSRAM 5.7 TBD µs HSE + PLL 648 MHz, SYSRAM 112 TBD MPU wakeup from CStop, MCU in CRun HSI 64 MHz, SYSRAM 0.54 TBD HSE + PLL 648 MHz, SYSRAM 0.083 TBD tWULPLV- STOP_MPU MPU wakeup from CStop with system in LPLV-Stop (LVDS=1), MCU in CStop HSI 64 MHz, SYSRAM 410 TBD tWUCSLEEP_M CU MCU wakeup from CSleep, MPU in CSleep HSE 24 MHz, SRAM 6 TBD CPU clock cycles tWULPLV- STOP_MCU MCU wakeup from CStop with system in LPLV-Stop (LVDS=1), MPU in CStop HSI 64 MHz, SRAM, MCTMPSKP = 1 5.3 TBD µs HSI 64 MHz, SRAM, MCTMPSKP = 0, PWR_LP delay = 1 ms 1.4 TBD tWUCSTOP_ MCU MCU wakeup from CStop, MPU in CStop HSI 64 MHz, SRAM 5.3 TBD tWUCSTOP_ MCU2 MCU wakeup from CStop, HSI active (HSIKERON=1), MPU in CStop HSI 64 MHz, SRAM 0.33 TBD tWUCSTOP_ MCU3 MCU wakeup from CStop, MPU in CRun HSI 64 MHz, SRAM 0.12 TBD tWUSTANDBY_ MCU MCU wakeup from STANDBY HSI 64 MHz, RETRAM 2550 TBD 1. Guaranteed by characterization results unless otherwise specified. Table 27. Wakeup time using USART/LPUART(1) Symbol Parameter Conditions Typ Max Unit tWUUSART tWULPUART Wakeup time needed to calculate the maximum USART/LPUART baud rate allowing the wakeup from stop mode when USART/LPUART clock source is HSI. Stop - 6.7 µs LPLV-Stop - 240.7(2) µs 1. Guaranteed by design. 2. Including the tSEL_VDDCORETEMPO = 234 μs. |
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