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ST10F271 Fiches technique(PDF) 130 Page - STMicroelectronics |
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ST10F271 Fiches technique(HTML) 130 Page - STMicroelectronics |
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130 / 173 page ![]() Electrical characteristics ST10F271 130/173 Figure 38. Supply current versus the operating frequency (RUN and IDLE modes) 24.6 Flash characteristics V DD = 5 V ± 10%, VSS = 0 V fCPU [MHz] 10 20 150 100 50 40 30 50 60 70 0 0 IID ICC1 = ICC2 Table 64. Flash characteristics Parameter Typical Maximum Unit Notes TA = 25°C TA = 125°C 0 cycles(1) 0 cycles(1) 100k cycles Word Program (32-bit) (2) 35 80 290 µs– Double Word Program (64-bit)(2)) 60 150 570 µs– Bank 0 Program (128K) (Double Word Program) 1.6 2.0 3.9 s – Sector Erase (8K) 0.6 0.5 0.9 0.8 1.0 0.9 s not preprogrammed preprogrammed Sector Erase (32K) 1.1 0.8 2.0 1.8 2.7 2.5 s not preprogrammed preprogrammed Sector Erase (64K) 1.7 1.3 3.7 3.3 5.1 4.7 s not preprogrammed preprogrammed Bank 0 Erase (128K) (3) 5.6 4.0 13.6 11.9 19.2 17.5 s not preprogrammed preprogrammed Recovery from Power-Down (tPD)– 40 40 µs (4) Program Suspend Latency (4) –10 10 µs |
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