B1375 datasheet(2/5 Pages) TOSHIBA

No de pièce	B1375

Description	Silicon PNP Triple Diffused Type

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Fabricant	TOSHIBA [Toshiba Semiconductor]

Site Internet	http://www.semicon.toshiba.co.jp/eng

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2 / 5 page

2SB1375

2006-11-21

2

Electrical Characteristics (Tc = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Collector cut-off current

ICBO

VCB = −60 V, IE = 0

―

−10

μA

Emitter cut-off current

IEBO

VEB = −7 V, IC = 0

―

−10

μA

Collector-emitter breakdown voltage

V (BR) CEO

IC = −50 mA, IB = 0

−60

―

V

hFE (1)

VCE = −5 V, IC = −0.5 A

100

―

320

DC current gain

hFE (2)

VCE = −5 V, IC = −2 A

15

―

Collector-emitter saturation voltage

VCE (sat)

IC = −2 A, IB = −0.2 A

―

−1.0

−1.5

V

Base-emitter voltage

VBE

VCE = −5 V, IC = −0.5 A

―

−0.75

−1.0

V

Transition frequency

fT

VCE = −5 V, IC = −0.5 A

―

9

―

MHz

Collector output capacitance

Cob

VCB = −10 V, IE = 0, f = 1 MHz

―

50

―

pF

Marking

Lot No.

A line indicates

lead (Pb)-free package or

lead (Pb)-free finish.

B1375

Part No. (or abbreviation code)

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