HY3810P datasheet(3/14 Pages) HUAYI

No de pièce	HY3810P

Description	N-Channel Enhancement Mode MOSFET

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Fabricant	HUAYI [HUAYI MICROELECTRONICS CO.,LTD.]

Site Internet	http://www.hymexa.com/

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-

45

3

Electrical Characteristics (Cont.) (T

C = 25C Unless Otherwise Noted)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Dynamic Characteristics

RG

Gate Resistance

VGS=0V,VDS=0V,F=1MHz

-

2.3

-



Ciss

Input Capacitance

-

7889

-

Coss

Output Capacitance

-

1013

-

Crss

Reverse Transfer Capacitance

VGS=0V,

VDS=25V,

Frequency=1.0MHz

-

631

-

pF

td(ON)

Turn-on Delay Time

-

28

-

Tr

Turn-on Rise Time

-

td(OFF)

Turn-off Delay Time

-

85

-

Tf

Turn-off Fall Time

VDD=50V, RG=6 ,

IDS =90A, VGS=10V,

-

50

-

ns

Gate Charge Characteristics

Qg

Total Gate Charge

-

185

-

Qgs

Gate-Source Charge

-

34

-

Qgd

Gate-Drain Charge

VDS=80V, VGS=10V,

IDS=90A

-

60

-

nC

Note * : Pulse test ; pulse width

300

s, duty cycle2%.

.

HY3810

HY3810P/M/B/PS/PM

V1.0

www.hymexa.com

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