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HY3810P Fiches technique(PDF) 2 Page - HUAYI MICROELECTRONICS CO.,LTD. |
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HY3810P Fiches technique(HTML) 2 Page - HUAYI MICROELECTRONICS CO.,LTD. |
2 / 14 page ![]() 1128*** 720** 100 HY3810 2 Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage 100 VGSS Gate-Source Voltage ±25 V TJ Maximum Junction Temperature 175 °C TSTG Storage Temperature Range -55 to 175 °C IS Diode Continuous Forward Current TC=25°C 180 A Mounted on Large Heat Sink IDM TC=25°C A TC=25°C 180 ID Continuous Drain Current TC=100°C 132 A TC=25°C 346 PD Maximum Power Dissipation TC=100°C 173 W RJC Thermal Resistance-Junction to Case 0.43 RJA Thermal Resistance-Junction to Ambient 62.5 °C/W Avalanche Ratings EAS Avalanche Energy, Single Pulsed L=0.5mH mJ Electrical Characteristics (T C = 25C Unless Otherwise Noted) Symbol Parameter Test Conditions Min. Typ. Max. Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250A - V VDS=100V, VGS=0V - - 1 IDSS Zero Gate Voltage Drain Current TJ=85°C - - 10 A VGS(th) Gate Threshold Voltage VDS=VGS, IDS=250A 2.0 3.0 4.0 V IGSS Gate Leakage Current VGS=±25V, VDS=0V - - ±100 nA RDS(ON) Drain-Source On-state Resistance VGS=10V, IDS=90A - 5.0 6.5 m Diode Characteristics VSD Diode Forward Voltage ISD=90A, VGS=0V - 0.8 1 V trr Reverse Recovery Time - 65 - ns Qrr Reverse Recovery Charge ISD=90A, dlSD/dt=100A/s - 103 - nC Note : ** Drain current is limited by junction temperature *** VD=80V * Repetitive rating ; pulse width limiited by junction temperature Pulsed Drain Current * * * - HY3810P/M/B/PS/PM V1.0 www.hymexa.com |
Numéro de pièce similaire - HY3810P |
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Description similaire - HY3810P |
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