![]() |
Moteur de recherche de fiches techniques de composants électroniques |
|
MMVL105GT1 Fiches technique(PDF) 2 Page - ON Semiconductor |
|
|
MMVL105GT1 Fiches technique(HTML) 2 Page - ON Semiconductor |
2 / 3 page ![]() MMVL105GT1 http://onsemi.com 2 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Reverse Breakdown Voltage (IR = 10 mAdc) V(BR)R 30 − − Vdc Reverse Voltage Leakage Current (VR = 28 Vdc) IR − − 50 nAdc Device Type CT VR = 25 Vdc, f = 1.0 MHz pF Q VR = 3.0 Vdc f = 50 MHz CR C3/C25 f = 1.0 MHz Min Max Typ Min Max MMVL105GT1 1.5 2.8 250 4.0 6.5 TYPICAL CHARACTERISTICS Figure 1. Diode Capacitance 20 16 12 8.0 4.0 0 0.3 1.0 10 20 30 VR, REVERSE VOLTAGE (VOLTS) Figure 2. Figure of Merit f, FREQUENCY (MHz) Figure 3. Diode Capacitance TA, AMBIENT TEMPERATURE (°C) 10 1000 100 10 100 1000 1.04 −75 1.02 1.00 0.98 0.96 −25 +25 +75 +125 VR = 3.0 Vdc f = 1.0 MHz 18 14 10 6.0 2.0 f = 1.0 MHz TA = 25°C VR = 3 Vdc TA = 25°C −50 0 +50 +100 1.03 1.01 0.99 0.97 0.5 2.0 3.0 5.0 |
Numéro de pièce similaire - MMVL105GT1_06 |
|
Description similaire - MMVL105GT1_06 |
|
|
Lien URL |
Politique de confidentialité |
ALLDATASHEET.FR |
ALLDATASHEET vous a-t-il été utile ? [ DONATE ] |
À propos de Alldatasheet | Publicité | Contactez-nous | Politique de confidentialité | Echange de liens | Fabricants All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |