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MMBV409LT1 Fiches technique(PDF) 1 Page - ON Semiconductor |
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MMBV409LT1 Fiches technique(HTML) 1 Page - ON Semiconductor |
1 / 3 page ![]() © Semiconductor Components Industries, LLC, 2006 January, 2006 − Rev. 3 1 Publication Order Number: MMBV409LT1/D MMBV409LT1 Preferred Device Silicon Tuning Diode This device is designed in the Surface Mount package for general frequency control and tuning applications. It provides solid−state reliability in replacement of mechanical tuning methods. Features • High Q with Guaranteed Minimum Values at VHF Frequencies • Controlled and Uniform Tuning Ratio • Available in Surface Mount Package • Pb−Free Package is Available MAXIMUM RATINGS Rating Symbol Value Unit Reverse Voltage VR 20 Vdc Forward Current IF 200 mAdc Forward Power Dissipation @ TA = 25°C Derate above 25 °C PD 225 1.8 mW mW/ °C Junction Temperature TJ +125 °C Storage Temperature Range Tstg −55 to +150 °C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. http://onsemi.com SOT−23 (TO−236) CASE 318 STYLE 8 Device Package Shipping† ORDERING INFORMATION MMBV409LT1 SOT−23 3,000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. MMBV409LT1G SOT−23 (Pb−Free) 3,000 / Tape & Reel 3 Cathode 1 Anode Preferred devices are recommended choices for future use and best overall value. 1 2 3 *Date Code orientation and/or overbar may vary depending upon manufacturing location. 1 X5 M G G X5 = Specific Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) MARKING DIAGRAM |
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