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STM32U535NET3QTR Fiches technique(PDF) 168 Page - STMicroelectronics

No de pièce STM32U535NET3QTR
Description  Ultra-low-power Arm® Cortex®-M33 MCUTrustZone®FPU,240 DMIPS, up to 512 KB flash memory, 274 KB SRAM
PDF  278 Pages
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Fabricant  STMICROELECTRONICS [STMicroelectronics]
Site Internet  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STM32U535NET3QTR Fiches technique(HTML) 168 Page - STMicroelectronics

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IDD(BKPSRAM)
Supply current to be
added in Standby mode
when backup SRAM is
retained
-
1.8
0.15
0.28
0.63
1.25
2.40
0.47
0.84
1.90
3.80
7.20
µA
2.4
0.15
0.24
0.63
1.26
2.50
0.45
0.71
1.90
3.80
7.50
3.0
0.15
0.24
0.64
1.31
2.60
0.47
0.74
2.00
4.00
7.80
3.3
0.14
0.26
0.64
1.30
2.50
0.44
0.78
2.00
3.90
7.50
3.6
0.14
0.29
0.65
1.30
2.50
0.42
0.87
2.00
3.90
7.50
IDD(SRAM2)
Supply current to be
added in Standby mode
when full SRAM2 and
BKPSRAM are retained
LDO
1.8
1.67
4.59
12.79 27.06 55.90
5.10
14.00 39.00 82.00 170.00
2.4
1.68
4.45
12.83 27.23 56.20
5.10
14.00 39.00 82.00 170.00
3.0
1.52
3.82
12.84 27.21 56.10
4.60
12.00 39.00 82.00 170.00
3.3
1.51
3.85
12.81 27.30 56.30
4.60
12.00 39.00 82.00 170.00
3.6
1.87
4.29
12.79 27.10 56.00
5.70
13.00 39.00 82.00 170.00
IDD(SRAM2_8K)
Supply current to be
added in Standby mode
when SRAM2 8-Kbyte
page 1 and BKPSRAM
are retained
1.8
0.57
1.34
4.02
8.36
17.10
1.80
4.10
13.00 26.00
52.00
2.4
0.64
1.35
4.04
8.33
17.20
2.00
4.10
13.00 25.00
52.00
3.0
0.64
1.40
4.04
8.41
17.10
2.00
4.30
13.00 26.00
52.00
3.3
0.66
1.39
3.98
8.40
17.20
2.00
4.20
12.00 26.00
52.00
3.6
0.75
1.41
3.89
8.20
16.70
2.30
4.30
12.00 25.00
51.00
Table 66. Current consumption in Standby mode (continued)
Symbol
Parameter
Conditions
Typ
Max(1)
Unit
-VDD (V) 25°C 55°C 85°C 105°C 125°C 25°C 55°C 85°C 105°C 125°C



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