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STM32U535NET3QTR Fiches technique(PDF) 138 Page - STMicroelectronics |
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STM32U535NET3QTR Fiches technique(HTML) 138 Page - STMicroelectronics |
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138 / 278 page ![]() Table 36. Current consumption in Run mode on LDO, code with data processing running from flash memory, ICACHE ON (1-way), prefetch ON(1) Parameter Conditions Typ Max(2) Unit - Voltage scaling fHCLK (MHz) 25°C 55°C 85°C 105°C 125°C 25°C 55°C 85°C 105°C 125°C IDD (Run) Supply current in Run mode fHCLK = fMSI, all peripherals and AHB/APB disabled, Flash bank 2 in power down, all SRAMs enabled Range 4 24 1.60 1.75 2.20 2.85 4.10 2.10 2.50 3.80 5.70 9.60 mA 16 1.20 1.30 1.75 2.40 3.65 1.70 2.00 3.30 5.30 9.10 12 0.93 1.05 1.50 2.15 3.40 1.40 1.70 3.10 5.00 8.80 4 0.40 0.54 0.96 1.60 2.90 0.72 1.20 2.50 4.40 8.30 2 0.27 0.41 0.84 1.50 2.75 0.59 1.00 2.30 4.30 8.10 1 0.21 0.35 0.78 1.45 2.70 0.52 0.93 2.30 4.20 8.10 0.4 0.17 0.31 0.74 1.40 2.65 0.47 0.88 2.20 4.20 8.00 0.1 0.15 0.29 0.72 1.35 2.65 0.45 0.86 2.20 4.10 8.00 fHCLK = PLL on HSE 16 MHz in bypass mode, all peripherals and AHB/APB disabled, Flash bank 2 in power down, all SRAMs enabled Range 1 160 13.00 13.50 14.00 15.00 17.00 16.00 17.00 20.00 24.00 33.00 140 11.50 12.00 12.50 13.50 15.50 14.00 15.00 18.00 22.00 31.00 120 9.90 10.00 11.00 12.00 14.00 12.00 13.00 16.00 21.00 29.00 Range 2 110 8.35 8.60 9.20 10.00 11.50 9.80 11.00 13.00 16.00 23.00 72 5.65 5.90 6.50 7.35 8.95 6.80 7.60 9.80 13.00 20.00 64 5.10 5.30 5.90 6.80 8.35 6.20 6.90 9.10 13.00 19.00 fHCLK = fHSE bypass mode, all peripherals and AHB/APB disabled, Flash bank 2 in power down, all SRAMs enabled Range 3 55 4.05 4.25 4.75 5.45 6.85 4.90 5.50 7.10 9.60 15.00 32 2.50 2.65 3.15 3.90 5.30 3.20 3.70 5.40 7.90 13.00 1. The current consumption from SRAM is similar. 2. Evaluated by characterization. Not tested in production. |
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