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STM32F732IE Fiches technique(PDF) 108 Page - STMicroelectronics |
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STM32F732IE Fiches technique(HTML) 108 Page - STMicroelectronics |
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108 / 226 page ![]() Electrical characteristics STM32F732xx STM32F733xx 108/226 DS11854 Rev 6 6.3.5 Reset and power control block characteristics The parameters given in Table 22 are derived from tests performed under ambient temperature and VDD supply voltage conditions summarized in Table 16. Table 22. Reset and power control block characteristics Symbol Parameter Conditions Min Typ Max Unit VPVD Programmable voltage detector level selection PLS[2:0]=000 (rising edge) 2.09 2.14 2.19 V PLS[2:0]=000 (falling edge) 1.98 2.04 2.08 V PLS[2:0]=001 (rising edge) 2.23 2.30 2.37 V PLS[2:0]=001 (falling edge) 2.13 2.19 2.25 V PLS[2:0]=010 (rising edge) 2.39 2.45 2.51 V PLS[2:0]=010 (falling edge) 2.29 2.35 2.39 V PLS[2:0]=011 (rising edge) 2.54 2.60 2.65 V PLS[2:0]=011 (falling edge) 2.44 2.51 2.56 V PLS[2:0]=100 (rising edge) 2.70 2.76 2.82 V PLS[2:0]=100 (falling edge) 2.59 2.66 2.71 V PLS[2:0]=101 (rising edge) 2.86 2.93 2.99 V PLS[2:0]=101 (falling edge) 2.65 2.84 2.92 V PLS[2:0]=110 (rising edge) 2.96 3.03 3.10 V PLS[2:0]=110 (falling edge) 2.85 2.93 2.99 V PLS[2:0]=111 (rising edge) 3.07 3.14 3.21 V PLS[2:0]=111 (falling edge) 2.95 3.03 3.09 V VPVDhyst(1) PVD hysteresis - - 100 - mV VPOR/PDR Power-on/power-down reset threshold Falling edge 1.60 1.68 1.76 V Rising edge 1.64 1.72 1.80 V VPDRhyst(1) PDR hysteresis - - 40 - mV VBOR1 Brownout level 1 threshold Falling edge 2.13 2.19 2.24 V Rising edge 2.23 2.29 2.33 V VBOR2 Brownout level 2 threshold Falling edge 2.44 2.50 2.56 V Rising edge 2.53 2.59 2.63 V VBOR3 Brownout level 3 threshold Falling edge 2.75 2.83 2.88 V Rising edge 2.85 2.92 2.97 V VBORhyst(1) BOR hysteresis - - 100 - mV TRSTTEMPO (1)(2) POR reset temporization - 0.5 1.5 3.0 ms |
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