K3878 datasheet(2/6 Pages) THINKISEMI

No de pièce	K3878

Description	THINKISEMI 9A,900V N-CHANNEL PLANAR STRIPE POWER MOSFETs

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Rev.11T

Electrical Characteristics (Ta

= 25°C)

Characteristic

Symbol

Test Condition

Min

Typ.

Max

Unit

Gate leakage current

IGSS

VGS = ±30 V, VDS = 0 V

⎯

±10

μA

Gate-source breakdown voltage

V (BR) GSS

IG = ±10 μA, VDS = 0 V

±30

⎯

V

Drain cutoff current

IDSS

VDS = 720 V, VGS = 0 V

⎯

100

μA

Drain-source breakdown voltage

V (BR) DSS

ID = 10 mA, VGS = 0 V

900

⎯

V

Gate threshold voltage

Vth

VDS = 10 V, ID = 1 mA

2.0

⎯

4.0

V

Drain-source ON resistance

RDS (ON)

VGS = 10 V, ID = 4 A

⎯

1.0

1.3

Ω

Forward transfer admittance

⎪Yfs⎪

VDS = 15 V, ID = 4 A

3.5

7.0

⎯

S

Input capacitance

Ciss

⎯

2200

⎯

Reverse transfer capacitance

Crss

⎯

45

⎯

Output capacitance

Coss

VDS = 25 V, VGS = 0 V, f = 1 MHz

⎯

190

⎯

pF

Rise time

tr

⎯

25

⎯

Turn-on time

ton

⎯

65

⎯

Fall time

tf

⎯

20

⎯

Switching time

Turn-off time

toff

⎯

120

⎯

ns

Total gate charge

(gate-source plus gate-drain)

Qg

⎯

60

⎯

Gate-source charge

Qgs

⎯

34

⎯

Gate-drain (“Miller”) charge

Qgd

VDD ≈ 400 V, VGS = 10 V, ID = 9 A

⎯

26

⎯

nC

Source-Drain Ratings and Characteristics (Ta = 25°C)

Characteristic

Symbol

Test Condition

Min

Typ.

Max

Unit

Continuous drain reverse current (Note 1)

IDR

⎯

9

A

Pulse drain reverse current

(Note 1)

IDRP

⎯

27

A

Forward voltage (diode)

VDSF

IDR = 9 A, VGS = 0 V

⎯

−1.7

V

Reverse recovery time

trr

⎯

1.4

⎯

μs

Reverse recovery charge

Qrr

IDR = 9 A, VGS = 0 V,

dIDR/dt = 100 A/μs

⎯

16

⎯

μC

Duty

≤ 1%, tw = 10 μs

0 V

10 V

VGS

RL = 100 Ω

VDD ≈ 400 V

ID = 4 A

VOUT

Note 1: Ensure that the channel temperature does not exceed 150°C

during use of the device.

Note 2: VDD = 90 V, Tch = 25°C, L = 17.6 mH, RG = 25 Ω, IAR = 9 A

Note 3: Repetitive rating: pulse width limited by max junction temperature

This transistor is an electrostatic-sensitive device. Handle with care.

K3878

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