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IXGH50N60B Fiches technique(PDF) 1 Page - IXYS Corporation

No de pièce IXGH50N60B
Description  HiPerFAST IGBT
Download  4 Pages
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Fabricant  IXYS [IXYS Corporation]
Site Internet  http://www.ixys.com
Logo IXYS - IXYS Corporation

IXGH50N60B Fiches technique(HTML) 1 Page - IXYS Corporation

  IXGH50N60B Datasheet HTML 1Page - IXYS Corporation IXGH50N60B Datasheet HTML 2Page - IXYS Corporation IXGH50N60B Datasheet HTML 3Page - IXYS Corporation IXGH50N60B Datasheet HTML 4Page - IXYS Corporation  
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© 2002 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
CES
T
J
= 25
°C to 150°C
600
V
V
CGR
T
J
= 25
°C to 150°C; R
GE = 1 MΩ
600
V
V
GES
Continuous
±20
V
V
GEM
Transient
±30
V
I
C25
T
C
= 25
°C75
A
I
C90
T
C
= 90
°C50
A
I
CM
T
C
= 25
°C, 1 ms
200
A
SSOA
V
GE = 15 V, TVJ = 125°C, RG = 10 Ω
I
CM = 100
A
(RBSOA)
Clamped inductive load
@ 0.8 V
CES
P
C
T
C
= 25
°C
300
W
T
J
-55 ... +150
°C
T
JM
150
°C
T
stg
-55 ... +150
°C
M
d
Mounting torque
TO-247AD
1.13/10 Nm/lb.in.
TO-264
0.9/6 Nm/lb.in.
Maximum lead temperature for soldering
300
°C
1.6 mm (0.062 in.) from case for 10 s
Weight
TO-247
6
g
TO-264
10
g
TO-268
4
g
95585F(12/02)
V
CES
= 600
V
I
C25
=
75
A
V
CE(sat)
= 2.3
V
t
fi(typ)
=
120
ns
IXGH 50N60B
IXGK 50N60B
IXGT 50N60B
IXGJ 50N60B
Symbol
Test Conditions
Characteristic Values
(T
J = 25°C, unless otherwise specified)
Min.
Typ. Max.
BV
CES
I
C
= 250
µA, V
GE = 0 V
600
V
V
GE(th)
I
C
= 250
µA, V
CE = VGE
2.5
5.0
V
I
CES
V
CE = 0.8 • VCES
T
J =
25
°C
200
µA
V
GE = 0 V
T
J = 125°C1
mA
I
GES
V
CE = 0 V, VGE = ±20 V
±100
nA
V
CE(sat)
I
C
= I
C90, VGE = 15 V
2.3
V
Features
• International standard packages
• High frequency IGBT
• Latest generation HDMOSTM process
• High current handling capability
• MOS Gate turn-on
- drive simplicity
Applications
• AC motor speed control
• DC servo and robot drives
• DC choppers
• Uninterruptible power supplies (UPS)
• Switch-mode and resonant-mode
power supplies
Advantages
• Easy to mount with 1 screw
(insulated mounting screw hole)
• Switching speed for high frequency
applications
• High power density
HiPerFASTTM IGBT
TO-247 AD (IXGH)
C
E
C (TAB)
TO-268 (D3) ( IXGT)
C (TAB)
G
E
G = Gate
D = Drain
E = Emitter
TAB = Collector
TO-264 AA (IXGK)
E
G
C
C (TAB)
(TAB)
G
C
E
TO-268 Leaded (IXGJ)


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