1

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Amplifier Transistors

NPN Silicon

MAXIMUM RATINGS

Rating

Symbol

MPS918

MPS3563

Unit

Collector – Emitter Voltage

VCEO

15

12

Vdc

Collector – Base Voltage

VCBO

30

30

Vdc

Emitter – Base Voltage

VEBO

3.0

2.0

Vdc

Collector Current — Continuous

IC

50

mAdc

Total Device Dissipation @ TA = 25°C

Derate above 25

°C

PD

350

2.8

mW

mW/

°C

Total Device Dissipation @ TC = 25°C

Derate above 25

°C

PD

0.85

6.8

Watts

mW/

°C

Operating and Storage Junction

Temperature Range

TJ, Tstg

– 55 to +150

°C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Ambient

RqJA(1)

357

°C/W

Thermal Resistance, Junction to Case

RqJC

147

°C/W

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector – Emitter Breakdown Voltage(2)

(IC = 3.0 mAdc, IB = 0)

MPS918

MPS3563

V(BR)CEO

15

12

—

—

Vdc

Collector – Base Breakdown Voltage

(IC = 1.0 mAdc, IE = 0)

MPS918

(IC = 100 mAdc, IE = 0)

MPS3563

V(BR)CBO

30

30

—

—

Vdc

Emitter – Base Breakdown Voltage

(IE = 10 mAdc, IC = 0)

MPS918

MPS3563

V(BR)EBO

3.0

2.0

—

—

Vdc

Collector Cutoff Current

(VCB = 15 Vdc, IE = 0)

MPS918

MPS3563

ICBO

—

—

10

50

nAdc

1. RqJA is measured with the device soldered into a typical printed circuit board.

2. Pulse Test: Pulse Width

v 300 ms; Duty Cycle v 1.0%.

Preferred devices are Motorola recommended choices for future use and best overall value.

Order this document

MPS918/D

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

MPS918

MPS3563

*Motorola Preferred Device

CASE 29–04, STYLE 1

TO–92 (TO–226AA)

1

2

3

*

COLLECTOR

3

2

BASE

1

EMITTER