MJE5730 datasheet(4/6 Pages) ONSEMI

No de pièce	MJE5730

Description	POWER TRANSISTORS PNP SILICON

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Fabricant	ONSEMI [ON Semiconductor]

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MJE5730 MJE5731 MJE5731A

4

Motorola Bipolar Power Transistor Device Data

t2

Figure 7. Switching Time Equivalent Circuit

TURN–ON PULSE

VBE(off)

Vin

APPROX

.

–11 V

0 V

t3

TURN–OFF PULSE

t1 ≤ 7.0 ns

100

≤ t2 < 500 µs

t3 < 15 ns

APPROX. + 9.0 V

DUTY CYCLE

≈ 2.0%

VCC

Vin

RC

RB

SCOPE

+ 4.0 V

Cjd << Ceb

51

t1

0.02

0.2

2.0

0.1

0.05

0.5

1.0

5.0

IC, COLLECTOR CURRENT (AMPS)

TJ = 25°C

VCC = 200 V

IC/IB = 5.0

2.0

1.0

0.5

0.2

0.1

0.05

Figure 8. Turn–On Resistive Switching Times

Figure 9. Resistive Turn–Off Switching Times

IC, COLLECTOR CURRENT (AMPS)

0.01

1.0

0.5

0.1

0.05

0.02

0.2

2.0

0.1

0.05

0.5

1.0

tr

td

ts

tf

TJ = 25°C

VCC = 200 V

IC/IB = 5.0

0.2

0.03

0.3

0.03

0.3

3.0

0.03

0.3

INPUT

50

VBB1 = 10 V

RBB2 =

100

Ω

TUT

VCE MONITOR

100 mH

VCC = 20 V

+

–

RBB1 =

150

Ω

IC MONITOR

RS =

0.1

Ω

VBB2 =

0

+

–

Test Circuit

Voltage and Current Waveforms

INPUT

VOLTAGE

COLLECTOR

CURRENT

COLLECTOR

VOLTAGE

VCE(sat)

10 V

VCER

0 V

0.63 A

–5 V

0 V

100 ms

tw ≈ 3 ms

(SEE NOTE 1)

Figure 10. Inductive Load Switching

MJE171

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