2N2222AS datasheet(2/6 Pages) FS

No de pièce	2N2222AS

Description	General Purpose Transistor

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Fabricant	FS [First Silicon Co., Ltd]

Site Internet	http://www.firstsilicon.co.kr/

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ON CHARACTERISTICS (Note 2)

DC Current Gain

(IC = 0.1 mAdc, VCE = 10 Vdc)

(IC = 1.0 mAdc, VCE = 10 Vdc)

(IC = 10 mAdc, VCE = 10 Vdc)

(IC = 150 mAdc, VCE = 10 Vdc)

(IC = 500 mAdc, VCE = 10 Vdc)

HFE

35

50

75

100

40

−

300

−

Collector −Emitter Saturation Voltage

(IC = 150 mAdc, IB = 15 mAdc)

(IC = 500 mAdc, IB = 50 mAdc)

VCE(sat)

−

0.3

1.0

Vdc

Base −Emitter Saturation Voltage

(IC = 150 mAdc, IB = 15 mAdc)

(IC = 500 mAdc, IB = 50 mAdc)

VBE(sat)

0.6

−

1.2

2.0

Vdc

SMALL−SIGNAL CHARACTERISTICS

Current−Gain − Bandwidth Product

(IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz)

fT

300

−

MHz

Output Capacitance

(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)

Cobo

−

8.0

pF

Input Capacitance

(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)

Cibo

−

25

pF

Input Impedance

(VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz)

hie

0.25

1.25

k

Voltage Feedback Ratio

(VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz)

hre

−

4.0

X 10−4

Small −Signal Current Gain

(VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz)

hfe

75

375

−

Output Admittance

(VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz)

hoe

25

200

mhos

Noise Figure

(VCE = 10 Vdc, IC = 100 Adc, RS = 1.0 k ohms, f = 1.0 kHz)

NF

−

4.0

dB

SWITCHING CHARACTERISTICS

Delay Time

(VCC = 30 Vdc, V BE = −0.5 Vdc,

IC = 150 mAdc, IB1 = 15 mAdc)

td

−

10

ns

Rise Time

tr

−

25

Storage Time

(VCC = 30 Vdc, IC = 150 mAdc,

IB1 = IB2 = 15 mAdc)

ts

−

225

ns

Fall Time

tf

−

60

1. Device mounted on FR-4 PCB 16*16*0.6mm or on 99.5% alumina 10*8*0.6mm

2. Pulse Test: Pulse Width ≤300 s, Duty Cycle ≤2.0%.

2N2222AS

2011. 12. 16

2/6

Revision No : 2

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