EML17 datasheet(2/4 Pages) ROHM

No de pièce	EML17

Description	General purpose transistor

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Fabricant	ROHM [Rohm]

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EML17

Transistors

2/3

Absolute maximum ratings (Ta=25

°C)

Di1

Parameter

Symbol

VR

IO

IFSM

Tj

Tstg

Limits

30

100

500

125

−40 to +125

Unit

V

mA

°C

DC current voltage

Mean rectifying current

Forward peak surge current (60HZ 1cyc.)

Junction temperature

Storage temperature

∗ 60Hz, 1

Tr2

Parameter

Symbol

VCC

VIN

IO

IC(MAX)

Tj

Limits

−50

−40 to +10

−30

−100

150

Unit

V

mA

°C

Supply voltage

Input voltage

Output current

Junction temperature

Pd

120

mW

Power dissipation

Di1, Tr2

Parameter

Symbol

Pd

Tstg

Limits

150

−55 to +125

Unit

mW ∗

∗ Each terminal mounted on a recommended land.

°C

Power dissipation

Range of storage temperature

Electrical characteristics (Ta=25

°C)

Di1

Parameter

Symbol

Min.

Typ.

Max.

Unit

Conditions

−

0.45

VF

−

VIF=10mA

VR=10V

Forward voltage

IR

−

0.5

µA

Reverse current

∗ Please pay attention to static electricity when handling.

Tr2

Parameter

Symbol

Min.

Typ.

Max.

Unit

Conditions

VCE

= −10V, IE=5mA, f=100MHz ∗

∗ Transition frequency of the device

Resistance ratio

R2/R1

0.8

1

1.2

−

VI(off)

−

−−0.5

IC

= −5V, IO= −100µA

Input voltage

VI(on)

−3.0

−−

V

VO

= −0.3V, IO= −2mA

VO(on)

−

−0.1

−0.3

V

IO/II

= −10mA/ −0.5mA

Output voltage

II

−−

−0.18

mA

VI

= −5V

Input current

IO(off)

−−

−0.5

µAVCC= −50V, VI=0V

Output current

G1

68

−

−−

VO

= −5V, IO= −5mA

DC current gain

R1

32.9

47

61.1

k

Ω−

Input resistance

fT

−

250

−

MHz

Transition frequency

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