HIGH POWER SILICON

PNP/NPN TRANSISTORS

2N5876 / 2N5878

Semelab Limited

Semelab Limited

Semelab Limited

Semelab Limited

Coventry Road, Lutterworth, Leicestershire, LE17 4JB

Telephone +44 (0) 1455 556565

Fax +44 (0) 1455 552612

Document Number 9495

Issue 2

Page 2 of 3

Symbols

Parameters

Test Conditions

Min.

Typ

Max.

Units

V(BR)CEO

(2)

Collector-Emitter

Breakdown Voltage

IC = 20mA

IB = 0

80

V

ICEO

Collector Cut-Off Current

VCE = 40V

IB = 0

1.0

mA

ICEX

Collector Cut-Off Current

VCE = 80V

VBE = -1.5V

0.5

TC = 150°C

5

ICBO

Collector Cut-Off Current

VCB = 80V

IE = 0

0.5

IEBO

Emitter Cut-Off Current

VEB = 5V

IC = 0

1.0

hFE

(2)

Forward-current transfer

ratio

IC = 1.0A

VCE = 4V

35

-

IC = 4A

VCE = 4V

20

150

IC = 10A

VCE = 4V

4

VCE(sat)

(2)

Collector-Emitter Saturation

Voltage

IC = 5A

IB = 0.5A

1.0

V

IC = 10A

IB = 2.5A

3

VBE(sat)

(2)

Base-Emitter Saturation

Voltage

IC = 10A

IB = 2.5A

2.5

VBE(on)

(2)

Base-Emitter On Voltage

IC = 4A

VCE = 4V

1.5

DYNAMIC CHARACTERISTICS

fT

(3)

Current Gain-Bandwidth

Product

IC = 0.5A

VCE = 10V

4

MHz

f = 1.0MHz

hfe

Small Signal Current Gain

IC = 1.0A

VCE = 4V

20

-

f = 1.0KHz

Notes

Notes

Notes

Notes

(1)

For PNP (2N5876) device, voltage and current values are negative

(2)

Pulse Width ≤ 380us, δ ≤ 2%

(3)

fT = |hfe| * ftest