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IPP60R520E6 Fiches technique(PDF) 1 Page - Inchange Semiconductor Company Limited

No de pièce IPP60R520E6
Description  N-Channel MOSFET Transistor
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Fabricant  ISC [Inchange Semiconductor Company Limited]
Site Internet  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

IPP60R520E6 Fiches technique(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc website：www.iscsemi.cn
isc & iscsemi is registered trademark
1
isc N-Channel MOSFET Transistor
IPP60R520E6，IIPP60R520E6
·
FEATURES
·
Static drain-source on-resistance:
RDS(on) ≤0.52Ω
·
Enhancement mode
·
Fast Switching Speed
·
100% avalanche tested
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·
DESCRIPTION
·
Provide all benefits of a fast switching SJ MOSFET while not
sacrificing ease of use
·
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
600
V
VGS
Gate-Source Voltage
±
20
V
ID
Drain Current-Continuous
8.1
A
IDM
Drain Current-Single Pulsed
22
A
PD
Total Dissipation @TC=25℃
66
W
Tj
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature
-55~150
℃
·
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth(ch-c)
Channel-to-case thermal resistance
1.9
℃
/W
Rth(ch-a)
Channel-to-ambient thermal resistance
62
℃
/W


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