General Description

These N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced  PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.

Features

·  Q12.5 A, 30V. RDS(ON)= 95 mW@ VGS= 10 V

                     RDS(ON)= 150 mW@ VGS= 4.5 V

·  Q2–2.0 A, 30V. RDS(ON)= 150 mW@ VGS= –10 V

                       RDS(ON)= 220 mW@ VGS= –4.5 V

·  Low gate charge

·  High performance trench technology for extremely low RDS(ON).

·  SuperSOT –6 package: small footprint (72% smaller than SO-8); low profile (1mm thick).

Applications

·  DC/DC converter

·  Load switch

·  LCD display inverter