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42S32200 Fiches technique (PDF) - Integrated Silicon Solution, Inc

42S32200 Datasheet PDF - Integrated Silicon Solution, Inc
No de pièce 42S32200
Télécharger  42S32200 Télécharger

Taille du fichier   982.93 Kbytes
Page   55 Pages
Fabricant  ISSI [Integrated Silicon Solution, Inc]
Site Internet  http://www.issi.com
Logo ISSI - Integrated Silicon Solution, Inc
Description 512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

42S32200 Datasheet (PDF)

Go To PDF Page Télécharger Fiches technique
42S32200 Datasheet PDF - Integrated Silicon Solution, Inc

No de pièce 42S32200
Télécharger  42S32200 Click to download

Taille du fichier   982.93 Kbytes
Page   55 Pages
Fabricant  ISSI [Integrated Silicon Solution, Inc]
Site Internet  http://www.issi.com
Logo ISSI - Integrated Silicon Solution, Inc
Description 512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

42S32200 Fiches technique (HTML) - Integrated Silicon Solution, Inc

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42S32200 Détails du produit

OVERVIEW
ISSIs 64Mb Synchronous DRAM IS42S32200 is organized as 524,288 bits x 32-bit x 4-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input.

GENERAL DESCRIPTION
The 64Mb SDRAM is a high speed CMOS, dynamic random-access memory designed to operate in 3.3V memory systems containing 67,108,864 bits. Internally configured as a quad-bank DRAM with a synchronous interface. Each 16,777,216-bit bank is organized as 2,048 rows by 256 columns by 32 bits.

FEATURES
• Clock frequency: 166, 143 MHz
• Fully synchronous; all signals referenced to a positive clock edge
• Internal bank for hiding row access/precharge
• Single 3.3V power supply
• LVTTL interface
• Programmable burst length – (1, 2, 4, 8, full page)
• Programmable burst sequence: Sequential/Interleave
• Self refresh modes
• 4096 refresh cycles every 64 ms
• Random column address every clock cycle
• Programmable CAS latency (2, 3 clocks)
• Burst read/write and burst read/single write operations capability
• Burst termination by burst stop and precharge command
• Industrial temperature availability
• Package 400-mil 86-pin TSOP II




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À propos de Integrated Silicon Solution, Inc


Integrated Silicon Solution, Inc. (ISSI) is a fabless semiconductor company that designs and markets high-performance integrated circuits (ICs) for the automotive, industrial, medical, and communications markets. The company was founded in 1988 and is headquartered in Milpitas, California, USA.

ISSI's product portfolio includes static random access memory (SRAM), dynamic random access memory (DRAM), and analog and mixed-signal ICs. The company specializes in low-power, high-speed SRAMs, and is a leading supplier of DRAMs to the automotive market.

In 2015, ISSI was acquired by China's Uphill Investment Co., Ltd. and became a wholly-owned subsidiary of Uphill Investment.

*Ces informations sont fournies à titre informatif uniquement, nous ne serons pas responsables des pertes ou dommages causés par les informations ci-dessus.




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