Description These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic package. They are ideally suited for high-density applications, and eliminate the need for through-the-board mounting. Features • Closely Matched Current Transfer Ratios • Minimum BVCEO of 70 V Guaranteed – MOC205M, MOC206M, MOC207M • Minimum BVCEO of 30 V Guaranteed – MOC211M, MOC212M, MOC213M, MOC216M, MOC217M • Low LED Input Current Required for Easier Logic Interfacing – MOC216M, MOC217M • Convenient Plastic SOIC-8 Surface Mountable Package Style, with 0.050" Lead Spacing • Safety and Regulatory Approvals: – UL1577, 2,500 VACRMS for 1 Minute – DIN-EN/IEC60747-5-5, 565 V Peak Working Insulation Voltage Applications • Feedback Control Circuits • Interfacing and Coupling Systems of Different Potentials and Impedances • General Purpose Switching Circuits • Monitor and Detection Circuits
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