Fabricant | No de pièce | Fiches technique | Description |
Cree, Inc |
PTFB090901EA
|
710Kb / 14P |
Thermally-Enhanced High Power RF LDMOS FETs 90 W, 28 V, 920 ??960 MHz
|
Infineon Technologies A... |
PTFA092211EL
|
424Kb / 10P |
Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 ??960 MHz
Rev. 02, 2009-05-27 |
PTFA092201E
|
379Kb / 11P |
Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 - 960 MHz
Rev. 03.1, 2009-02-20 |
PTFA091201GL
|
391Kb / 10P |
Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920-960 MHz
Rev. 03, 2009-03-31 |
PTFA091201GL
|
288Kb / 10P |
Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 ??960 MHz
Rev. 02, 2008-08-27 |
PTFA091201E
|
272Kb / 10P |
Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 ??960 MHz
Rev. 03, 2007-11-19 |
PTFA091203EL
|
620Kb / 10P |
Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920-960 MHz
Rev. 05, 2010-11-12 |
PTFA092213EL
|
671Kb / 10P |
Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920-960 MHz
Rev. 04, 2010-11-04 |
Cree, Inc |
PTFB091507FH
|
618Kb / 13P |
Thermally-Enhanced High Power RF LDMOS FET 160 W, 28 V, 920 ??960 MHz
|
Infineon Technologies A... |
PTFB091802FC
|
1Mb / 9P |
Thermally-Enhanced High Power RF LDMOS FET 180 W, 28 V, 920 ??960 MHz
Rev. 02.1, 2016-06-10 |