Description
The CNY17XM, CNY17FXM and MOC810XM devices consist of a Gallium Arsenide IRED coupled with an NPN phototransistor in a dual in-line package.

Features
■ UL recognized (File # E90700, Vol. 2)
■ VDE recognized
    – Add option V (e.g., CNY17F2VM)
    – File #102497
■ Current transfer ratio in select groups
■ High BVCEO: 70V minimum (CNY17XM, CNY17FXM, MOC810XM)
■ Closely matched current transfer ratio (CTR) minimizes unit-to-unit variation.
■ Very low coupled capacitance along with no chip to pin 6 base connection for minimum noise susceptability (CNY17FXM, MOC810XM)