General Description

The 4N38M, H11DXM and MOC8204M are phototransistor-type optically coupled optoisolators. A gallium arsenide infrared emitting diode is coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dual-in-line package.

Features

■ High voltage:

   – MOC8204M, BVCER = 400V

   – H11D1M, H11D2M, BVCER = 300V

   – H11D3M, BVCER = 200V

■ High isolation voltage:

   – 7500 VAC peak, 1 second

■ Underwriters Laboratory (UL) recognized File # E90700, Volume 2

■ IEC 60747-5-2 approved (ordering option V)

Applications

■ Power supply regulators

■ Digital logic inputs

■ Microprocessor inputs

■ Appliance sensor systems

■ Industrial controls