| Fabricant | No de pièce | Fiches technique | Description |

Rohm
|
BU1561GV |
282Kb/6P |
Built-in JPEG Codec, SXGA Camera Module Interface, and QCIF+LCD controller interface |

PREMIER DEVICES, INC.
|
R2005240 |
63Kb/4P |
Si Reverse, 5 - 200MHz, 24.6dB typ. Gain @ 200MHz, 235A max. @ 24VDC |

M.S. Kennedy Corporatio...
|
MSK4231RH |
752Kb/8P |
Total Dose Hardened to 100 Krads(Si) (Method 1019.7 Condition A) |

PHOENIX CONTACT
|
2905809 |
432Kb/5P |
Electronic device circuit breaker - CB E1 24DC/4A SI-C P 10/29/2015 |
| 2905810 |
432Kb/5P |
Electronic device circuit breaker - CB E1 24DC/6A SI-C P 10/29/2015 |

Murata Manufacturing Co...
|
939301421510-F1S |
1Mb/9P |
Ultra-Broadband Diff Si Cap Pairs UBDC (2x10nF / 0402M / BV=11V) Rev. 1.9 |

PHOENIX CONTACT
|
2905807 |
432Kb/5P |
Electronic device circuit breaker - CB E1 24DC/2A SI-C P 10/29/2015 |

Texas Instruments
|
TPS7H5001-SP |
3Mb/58P |
TPS7H5001-SP Radiation-Hardness-Assured Si and GaN Dual Output Controller |

Kyocera Kinseki Corpota...
|
TVL-55738GD032J-LW-G-AAN |
860Kb/25P |
Transmissive and Normally white type 3.2??a-Si TFT LCD Module |

Powerex Power Semicondu...
|
QID1210006 |
905Kb/7P |
Split Dual Si/SiC Hybrid IGBT Module 100 Amperes/1200 Volts |

New Jersey Semi-Conduct...
|
2N1620 |
76Kb/1P |
Si NPN Power BJT, I(C) = S A to 9.9 A |

NXP Semiconductors
|
XC7SET86 |
74Kb/11P |
High-speed Si-gate CMOS device, 2-input EXCLUSIVE-OR function Rev. 01-7 September 2009 |
| 74AHC2G00 |
94Kb/17P |
The 74AHC2G/AHCT2G00 is a high-speed Si-gate CMOS device 2004 Jan 21 |

M.S. Kennedy Corporatio...
|
MSK0041RH |
209Kb/6P |
Total Dose Hardened to 100 Krads(Si) (Method 1019.7 Condition A) |
| MSK198RHL |
952Kb/7P |
Total Dose Tested to 100 Krads(Si) (Method 1019.7 Condition A) |

PHOENIX CONTACT
|
2905804 |
432Kb/5P |
Electronic device circuit breaker - CB E1 24DC/8A SI-R P 10/29/2015 |
| 2905805 |
432Kb/5P |
Electronic device circuit breaker - CB E1 24DC/10A SI-R P 10/29/2015 |

Hamamatsu Corporation
|
S1227 |
147Kb/4P |
Si photodiode For UV to visible, precision photometry; suppressed IR sensitivity |

Powerex Power Semicondu...
|
QID1210005 |
790Kb/7P |
Split Dual Si/SiC Hybrid IGBT Module 100 Amperes/1200 Volts |

New Jersey Semi-Conduct...
|
2SD113 |
94Kb/1P |
SI NPN POWER BJT, I(C) = 20 A TO 49.9 A |