1. Device Description:

️· Type: Reference diode (LM113 and LM313)
️· Function: Used for biasing amplifiers, providing a stable reference voltage.
️· Key Feature: Provides a breakdown voltage related to temperature.

2. Electrical Characteristics (Highlights from the data table - more complete data available in the full datasheet):

️· Breakdown Voltage: Approximately 5.1V (varies slightly between LM113 and LM313 models).
️· Operating Temperature: Not explicitly stated, but implied to be a wide range for typical semiconductor devices.
️· Noise Voltage: Specification available but value not mentioned
️· Reverse Dynamic Impedance:Specification available but value not mentioned
️· Thermal Resistance (Important for Power Dissipation):
- Junction to Case: 80 °C/W
- Junction to Ambient: 440 °C/W

3. Operating Considerations/Cautions:

️· Power Dissipation: Must be managed. Derating is necessary at higher temperatures.
️· Shunt Capacitance: Avoid operating with shunt capacitance between 200pF and 0.1mF, as this could lead to oscillation.
️· Lead Length: The breakdown voltage is best measured with short leads.
️· Kelvin Contacts: For accurate voltage measurements, particularly at higher currents, Kelvin contacts are recommended.

4. Ordering Information:

️· Order Numbers: LM113H, LM113H/883, LM113-1H, LM113-1H/883, LM113-2H, LM113-2H/883, LM313H.
️· Package: NS Package Number H02A.

5. Life Support Policy:

️· The device is *not* authorized for use in life-support systems without explicit written approval from National Semiconductor's President.



Important Notes:

️· Datasheet Needed: This is a partial summary. A full datasheet would provide much more detailed specifications, graphs, application circuits, and mechanical dimensions.
️· Temperature Dependence: The breakdown voltage is temperature-dependent, which is a key characteristic of this diode. It's this characteristic that makes it useful for temperature compensation in circuits.