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BUZ201 Datasheet with Chat AI

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Part No.	BUZ201
Manufacturer	ISC
Size	47 Kbytes
Pages	2 pages
Description	SOA is Power Dissipation Limited

Datasheet Summary with AI

# isc N-Channel MOSFET Transistor BUZ201

## Description

· Static Drain-Source On-Resistance: R DS(on) = 0.4Ω (Max)
· SOA is Power Dissipation Limited

## Applications

· Switching regulators
· Switching converters
· Motor drivers
· Relay drivers
· Drivers for high-power bipolar switching transistors

## Absolute Maximum Ratings (Ta=25℃)

· VDSS (Drain-Source Voltage): 400V (VGS=0)
· VGS (Gate-Source Voltage): ±20V
· ID (Drain Current): 12.5A @ TC=37℃
· Ptot (Total Dissipation): 125W @ TC=25℃
· Tj (Junction Temperature): -55~150℃
· Tstg (Storage Temperature): -55~150℃

## Thermal Characteristics

· Rth j-c (Junction to Case Thermal Resistance): 1.0 ℃/W

## Electrical Characteristics (TC=25℃)

· V(BR)DSS (Drain-Source Breakdown Voltage): 400V @ VGS= 0; ID= 0.25mA
· VGS(TH) (Gate Threshold Voltage): 2.1-4V @ VDS= VGS; ID= 1mA
· RDS(ON) (Drain-Source On-stage Resistance): 0.4Ω @ VGS= 10V; ID= 8A
· IGSS (Gate Source Leakage Current): 100nA @ VGS= 20V; VDS= 0
· IDSS (Zero Gate Voltage Drain Current): 250uA @ VDS= 400V; VGS= 0
· VSD (Diode Forward Voltage): 1.7V @ IF= 25A; VGS= 0

## Website

· [www.iscsemi.cn](http://www.iscsemi.cn)