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Part No.	2SD861
Manufacturer	ISC
Size	142 Kbytes
Pages	2 pages
Description	Collector-Emitter Breakdown Voltage-: V(BR)CEO= 250V(Min)

Datasheet Summary with AI

# isc Silicon NPN Power Transistor 2SD861

## Description

· Collector-Emitter Breakdown Voltage: V(BR)CEO = 250V (Min)
· High Power Dissipation: PC = 45W @ TC = 25℃

## Applications

· Designed for audio frequency power amplifier applications.

## Absolute Maximum Ratings (Ta=25℃)

· VCBO: Collector-Base Voltage: 350 V
· VCEO: Collector-Emitter Voltage: 250 V
· VEBO: Emitter-Base Voltage: 5 V
· IC: Collector Current-Continuous: 1.5 A
· ICM: Collector Current-Peak: 3.0 A
· PC: Collector Power Dissipation @ TC=25℃: 45 W
· TJ: Junction Temperature: 150 ℃
· Tstg: Storage Temperature Range: -55~150 ℃

## Electrical Characteristics (TC=25℃ unless otherwise specified)

· V(BR)CEO: Collector-Emitter Breakdown Voltage (IC=30mA, IB=0): 250 V
· VCE(sat): Collector-Emitter Saturation Voltage (IC=1.5A, IB=0.3A): 1.0 V
· VBE(on): Base-Emitter On Voltage (IC=1.5A, VCE=10V): 1.5 V
· ICEO: Collector Cutoff Current (VCE=150V, IB=0): 1.0 mA
· ICES: Collector Cutoff Current (VCE=350V, VBE=0): 1.0 mA
· IEBO: Emitter Cutoff Current (VEB=5V, IC=0): 1.0 mA
· hFE-1: DC Current Gain (IC=0.3A, VCE=10V): 40-250
· hFE-2: DC Current Gain (IC=1.5A, VCE=10V): 10

## hFE-1 Classifications

R Q P

40-90 70-150 120-250

## Website

· www.iscsemi.cn