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Part No.	2SA843
Manufacturer	ISC
Size	108 Kbytes
Pages	2 pages
Description	쨌Collector-Emitter Breakdown Voltage : V(BR)CEO= -150V(Min)

Datasheet Summary with AI

|Tstg|Storage Temperature Range|-55~150|℃|

## Electrical Characteristics (TC=25℃)
|SYMBOL|PARAMETER|CONDITIONS|MIN|TYP.|MAX|UNIT|
|---|---|---|---|---|---|---|
|V(BR)CEO|Collector-Emitter Breakdown Voltage|IC= -5mA; IB= 0|-150|||V|
|VCE(sat)|Collector-Emitter Saturation Voltage|IC= -0.5A; IB= -50mA|||-1.0|V|
|hFE|DC Current Gain|IC= -0.4A; VCE= -10V|60||200||

## hFE Classifications
|P|Q|
|---|---|
|60-140|85-200|

_isc website: www.iscsemi.cn_

# 2SA843 Silicon PNP Power Transistor

## Description
· Collector-Emitter Breakdown Voltage: V(BR)CEO = -150V (Min)
· DC Current Gain: hFE = 60-200 @ IC = -0.4A
· Complement to Type 2SC1683

## Applications
· Audio frequency power amplifier applications.

## Absolute Maximum Ratings (Ta=25℃)

SYMBOL PARAMETER VALUE UNIT

VCBO Collector-Base Voltage -200 V

VCEO Collector-Emitter Voltage -150 V

VEBO Emitter-Base Voltage -5 V

IC Collector Current-Continuous -0.5 A

ICM Collector Current-Peak -2 A

PC Total Power Dissipation @ TC=25℃ 20 W

TJ Junction Temperature 150 ℃

Tstg Storage Temperature Range -55~150 ℃

## Electrical Characteristics (TC=25℃)

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

V(BR)CEO Collector-Emitter Breakdown Voltage IC= -5mA; IB= 0 -150 V

VCE(sat) Collector-Emitter Saturation Voltage IC= -0.5A; IB= -50mA -1.0 V

hFE DC Current Gain IC= -0.4A; VCE= -10V 60 200

## hFE Classifications

P Q

60-140 85-200

_isc website: www.iscsemi.cn_

SYMBOL	PARAMETER	VALUE	UNIT
VCBO	Collector-Base Voltage	-200	V
VCEO	Collector-Emitter Voltage	-150	V
VEBO	Emitter-Base Voltage	-5	V
IC	Collector Current-Continuous	-0.5	A
ICM	Collector Current-Peak	-2	A
PC	Total Power Dissipation @ TC=25℃	20	W
TJ	Junction Temperature	150	℃
Tstg	Storage Temperature Range	-55~150	℃

SYMBOL	PARAMETER	CONDITIONS	MIN	MAX	UNIT
V(BR)CEO	Collector-Emitter Breakdown Voltage	IC= -5mA; IB= 0	-150		V
VCE(sat)	Collector-Emitter Saturation Voltage	IC= -0.5A; IB= -50mA		-1.0	V
hFE	DC Current Gain	IC= -0.4A; VCE= -10V	60	200