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2SA651 Datasheet with Chat AI
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  • # Example questions: ➢ What is the typical value of the dc current gain (hfe) when ic = -2a and vce = -5v?
    ➢ What is the minimum collector-emitter breakdown voltage (v(br)ceo) for this transistor?
    ➢ How much continuous collector current (ic) can this transistor handle?

    • Part No.2SA651
    ManufacturerISC
    Size69 Kbytes
    Pages2 pages
    DescriptionCollector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min.)
    Datasheet Summary with AI

    # isc Silicon PNP Power Transistor 2SA651

    ## Description
    · Collector-Emitter Breakdown Voltage: V(BR)CEO = -150V (Min.)
    · Wide Area of Safe Operation

    ## Applications
    · Audio power amplifier applications

    ## Absolute Maximum Ratings (Ta=25℃)
    · VCBO: -200 V
    · VCEO: -150 V
    · VEBO: -5 V
    · IC (Continuous): -10 A
    · PC (@TC=25℃): 100 W
    · Tj: 150 ℃
    · Tstg: -55~150 ℃

    ## Electrical Characteristics (Tj=25℃ unless otherwise specified)
    · V(BR)CBO: -200 V (IC= -1mA; IE= 0)

    · V(BR)CEO: -150 V (IC= -25mA; IB= 0)
    · V(BR)EBO: -5 V (IE= -1mA; IC= 0)
    · VCE(sat): -2.0 V (IC= -5A; IB= -0.5A)
    · VBE(sat): -2.5 V (IC= -5A; IB= -0.5A)
    · ICBO: -0.1 mA (VCB= -200V; IE= 0)
    · IEBO: -0.1 mA (VEB= -5V; IC= 0)
    · hFE (DC Current Gain): 30-150 (IC= -2A; VCE= -5V)
    · COB (Collector Output Capacitance): 500 pF (IE=0; VCB= -5V; f= 1MHz)
    · fT (Current-Gain—Bandwidth Product): 10 MHz (IC= -0.5A; VCE= -10V)

    ## Website
    · www.iscsemi.cn

    # isc Silicon PNP Power Transistor 2SA651

    ## Description
    · Collector-Emitter Breakdown Voltage: V(BR)CEO = -150V (Min.)
    · Wide Area of Safe Operation

    ## Applications
    · Audio power amplifier applications

    ## Absolute Maximum Ratings (Ta=25℃)
    · VCBO: -200 V
    · VCEO: -150 V
    · VEBO: -5 V
    · IC (Continuous): -10 A
    · PC (@TC=25℃): 100 W
    · Tj: 150 ℃
    · Tstg: -55~150 ℃

    ## Electrical Characteristics (Tj=25℃ unless otherwise specified)
    · V(BR)CBO: -200 V (IC= -1mA; IE= 0)
    · V(BR)CEO: -150 V (IC= -25mA; IB= 0)
    · V(BR)EBO: -5 V (IE= -1mA; IC= 0)
    · VCE(sat): -2.0 V (IC= -5A; IB= -0.5A)
    · VBE(sat): -2.5 V (IC= -5A; IB= -0.5A)
    · ICBO: -0.1 mA (VCB= -200V; IE= 0)
    · IEBO: -0.1 mA (VEB= -5V; IC= 0)
    · hFE (DC Current Gain): 30-150 (IC= -2A; VCE= -5V)
    · COB (Collector Output Capacitance): 500 pF (IE=0; VCB= -5V; f= 1MHz)
    · fT (Current-Gain—Bandwidth Product): 10 MHz (IC= -0.5A; VCE= -10V)

    ## Website
    · www.iscsemi.cn

    Part No.2SA651
    ManufacturerISC
    Size69 Kbytes
    Pages2 pages
    DescriptionCollector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min.)
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