# AT002N5-11: GaAs 50 dB Voltage Variable Dual Control Attenuator (DC–3 GHz)

## Features

️· Dual Control Voltages
️· Low Insertion Loss
️· 8 Lead Hermetic Surface Mount Package
️· Capable of meeting MIL-STD Requirements

## Description

️· GaAs IC FET absorptive attenuator
️· Provides up to 50 dB variable attenuation (DC–3 GHz)
️· Attenuation controlled by two control bias voltages (0 to -5 V)
️· Recommended for fast response AGC circuits

## Electrical Specifications

️· Frequency Range: DC – 3 GHz
️· Attenuation Range:
- DC – 1.0 GHz: 50 dB ± 4 dB
- DC – 2.0 GHz: 45 dB ± 2 dB
- DC – 3.0 GHz: 40 dB ± 2 dB
️· Insertion Loss:
- DC – 1.0 GHz: 1.2 – 1.4 dB
- DC – 2.0 GHz: 1.4 – 1.8 dB
- DC – 3.0 GHz: 1.7 – 2.0 dB
️· VSWR (I/O):
- DC – 1.0 GHz: 1.2:1 – 1.3:1
- DC – 2.0 GHz: 1.4:1 – 1.5:1
- DC – 3.0 GHz: 1.6:1 – 1.8:1
️· Control Voltages: VLow = 0 to -0.2 V @ 20 µA; VHigh = -5 V @ 100 µA
️· Input Power for 1 dB Compression:
- 0 - 3 GHz: 0 dBm
- 0.05 GHz: -3 dBm

## Typical Performance

️· Insertion Loss vs. Frequency: Depicts insertion loss across the frequency range.
️· Relative Attenuation vs. Control Voltages: Shows attenuation based on control voltage levels.
️· Attenuation vs. 1.0 dB Compression Point: Illustrates attenuation relative to 1 dB compression.

## Absolute Maximum Ratings

️· V1 = 0, V2 = -5: Insertion Loss
️· V1 = -5, V2 = 0: Full Attenuation

## Characteristics

️· RF Input Power: 10 mW > 500 MHz, 4 mW 50 MHz
️· Operating Temperature: -55°C to +125°C
️· Storage Temperature: -65°C to +150°C
️· Thermal Resistance: 25°C/W