# Silicon PNP Power Transistors 2N6107 2N6109 2N6111

## Description

· TO-220 package
· Complement to NPN types: 2N6288, 2N6290, 2N6292
· Applications: Power amplifier and switching circuits

## Pinning

PIN	DESCRIPTION
1	Emitter
2	Collector (connected to mounting base)
3	Base

## Absolute Maximum Ratings (Ta=25℃)

SYMBOL	PARAMETER	2N6107	2N6109	2N6111	UNIT
VCBO	Collector-base voltage	-40	-60	-80	V
VCEO	Collector-emitter voltage	-30	-50	-70	V
VEBO	Emitter-base voltage	Open collector	-5	V
IC	Collector current		-7	A
ICM	Collector current-peak		-10	A
IB	Base current		-3	A
PT	Total power dissipation (TC=25℃)	40	W
Tj	Junction temperature	150	℃
Tstg	Storage temperature	-65~150	℃

## Thermal Characteristics

SYMBOL	PARAMETER	MAX	UNIT
Rth j-c	Thermal resistance from junction to case	3.125	℃/W

## Characteristics (Tj=25℃ unless otherwise specified)

SYMBOL	PARAMETER	CONDITIONS	MIN	TYP.	MAX	UNIT
VCEO(SUS)	Collector-emitter sustaining voltage	IC=-0.1A ;IB=0	-30			V
VCEsat	Collector-emitter saturation voltage	IC=-7A;IB=-3A			-3.5	V
VBE	Base-emitter on voltage	IC=-7A ; VCE=-4V			-3.0	V
ICEO	Collector cut-off current	VCE=-20V; IB=0			-1.0	mA
ICEX	Collector cut-off current	VCE=-40V; VBE=-1.5V,TC=125℃			-0.1<br>-2.0	mA
IEBO	Emitter cut-off current	V EB=-5V; IC=0			-1.0	mA
hFE-1	DC current gain	IC=-2A ; VCE=-4V	30	150
hFE-2	DC current gain	IC=-7A ; VCE=-4V	2.3
fT	Transition frequency	IC=-0.5A ; VCE=-4V;f=1MHz	10			MHz

## Package Outline

· Figure 2 depicts outline dimensions (tolerance: ±0.10 mm)