1. General Description:

️· The LS3550B is a monolithic dual PNP transistor in a TO-71 package.
️· It's designed for applications requiring matched characteristics (tight VBE matching and thermal tracking) making it useful in circuits like current mirrors, differential amplifiers, and similar applications where precise transistor pairing is needed.
️· The hermetically sealed TO-71 package makes it suitable for harsh environment applications.
️· It is also available as a bare die for custom applications.

2. Key Features:

️· Excellent Thermal Tracking: ≤ 5 µV/°C – This means the transistors' voltage outputs change predictably with temperature, crucial for stable operation in temperature variations.
️· Tight VBE Matching: ≤ 5 mV – This means the base-emitter voltages of the two transistors are very close, enabling accurate current mirroring and differential operation.
️· Monolithic Design: The two transistors are fabricated on the same chip, ensuring their matching characteristics.

3. Absolute Maximum Ratings:

️· Storage Temperature: -65°C to +150°C
️· Operating Junction Temperature: -55°C to +150°C
️· Continuous Power Dissipation: (Value is TBD - To Be Determined, check with the manufacturer)
️· Collector Current: 10 mA
️· Collector-Collector Voltage: 80 V

4. Electrical Characteristics (at 25°C unless otherwise noted):

️· VBE1 – VBE2 (Base-Emitter Voltage Differential): ≤ 5 mV (Important for matching)
️· ∆(VBE1 – VBE2) / ∆T (Change in VBE Differential with Temperature): ≤ 5 µV/°C (Important for thermal tracking)
️· IB1 – IB2 (Base Current Differential): ≤ 10 nA
️· ∆(IB1 – IB2) / ∆T (Change in Base Current Differential with Temperature): ≤ 0.5 nA/°C
️· hFE1 / hFE2 (DC Current Gain Differential): ≤ 10%
️· BVCBO (Collector-Base Breakdown Voltage): -40 V
️· BVCEO (Collector-Emitter Breakdown Voltage): -40 V
️· BVEBO (Emitter-Base Breakdown Voltage): -6.2 V
️· fT (Current Gain Bandwidth Product): 600 MHz
️· NF (Noise Figure): 3 dB (at specific conditions – see datasheet)
️· VCE(sat) (Collector-Emitter Saturation Voltage): 0.25 V

5. Package and Ordering:

️· Package: TO-71
️· Availability: Also available as a bare die.
️· Contact: Micross Components for package and die dimensions.

Important Notes:

️· The datasheet highlights that the power dissipation (continuous power dissipation) is "TBD" – so you'll need to consult the manufacturer for that specific value.
️· The datasheet also indicates that the information is believed to be accurate but no responsibility is assumed for its use.
️· Review the full datasheet for complete specifications, conditions, and application guidelines.