1. General Description:

️· The LS3550B is a PNP transistor designed for applications needing tight matching and low output capacitance.
️· It's housed in a SOIC package and is also available as a bare die.

2. Key Features:

️· Excellent Thermal Tracking: ≤5 µV/°C. This means the VBE values of the two transistors in the dual package change consistently with temperature.
️· Tight VBE Matching: VBE1 – VBE2 ≤ 5 mV. The base-emitter voltages are very close.
️· Low Output Capacitance: Beneficial for high-frequency applications.

3. Absolute Maximum Ratings:

️· Storage Temperature: -65°C to +150°C
️· Operating Junction Temperature: -55°C to +150°C
️· Continuous Power Dissipation: TBD (To Be Determined)
️· Collector Current: 10 mA
️· Collector to Collector Voltage: 80 V

4. Electrical Characteristics (at 25°C unless noted):

️· VBE Matching:
- VBE1 – VBE2 ≤ 5 mV (Base-Emitter Voltage differential)
- ∆(VBE1–VBE2)/∆T ≤ 5 µV/°C (Rate of change with temperature)
️· Base Current Matching:
* IB1 – IB2 ≤ 10 nA
* ∆(IB1–IB2)/∆T ≤ 0.5 nA/°C
️· Current Gain (hFE): A range of values are given based on collector current:
- 100 for IC = -1 mA
- 80 for IC = -10 mA
- 80 for IC = -100 mA
️· Saturation Voltage (VCE(sat)): 0.25 V
️· Cutoff Currents (IEBO, ICBO): Small values, indicating good cutoff characteristics.
️· Capacitances (COBO, CC1C2): Indicate the low output capacitance.
️· Frequency Response: fT (Current Gain Bandwidth Product) = 600 MHz
️· Noise Figure: 3 dB at f=1kHz

5. Important Notes:

️· The reverse base-emitter voltage should not exceed 6.2 V.
️· The reverse base-emitter current should not exceed 10 µA.



This provides a comprehensive overview of the LS3550B's specifications and features, based on the provided information.