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  • Part No.LSID101_TO-71
    ManufacturerMICROSS
    Size314 Kbytes
    Pages1 page
    DescriptionPICO-AMP DUAL DIODE
    Datasheet Summary with AI

    # ID101 Low Leakage Pico-Amp Dual Diode

    ## Features

    ️· Direct replacement for Intersil ID101
    ️· Low reverse leakage current: 0.1 pA
    ️· Reverse breakdown voltage: ≥ 30V
    ️· Reverse capacitance: 0.75 pF
    ️· Available Packages: TO-71, Bare Die (contact Micross for dimensions)

    ## Absolute Maximum Ratings

    ️· Storage Temperature: -65°C to +200°C
    ️· Operating Junction Temperature: -55°C to +150°C
    ️· Maximum Power Dissipation: 300mW
    ️· Forward Current: 20mA
    ️· Reverse Current: 100µA
    ️· Reverse Voltage: 30V
    ️· Diode-to-Diode Voltage: ±50V

    ## Electrical Characteristics

    ️· Reverse Breakdown Voltage (BVR): 30V (at IR=1µA)
    ️· Forward Voltage (VF): 0.8 - 1.1V (at IF=10mA)
    ️· Reverse Leakage Current (IR): 0.1 pA (at VR=1V)
    ️· Differential Leakage Current (|IR1-IR2|): ≤ 3
    ️· Total Reverse Capacitance (Crss): 0.75 - 1pF (at VR=10V, f=1MHz)

    ## Benefits & Applications

    ️· Benefits: Negligible circuit leakage contribution, circuit transparency, simplicity of operation.
    ️· Applications:
    - Op Amp Input Protection
    - Multiplexer Overvoltage Protection
    - Sample & Hold Circuits (offset voltage reduction)

    ## Important Notes

    ️· Pins 3 & 5 of the TO-71 package must not be connected to any circuit node.
    ️· Contact Micross for full package and die dimensions.

    # ID101 Low Leakage Pico-Amp Dual Diode

    ## Features

    ️· Direct replacement for Intersil ID101
    ️· Low reverse leakage current: 0.1 pA
    ️· Reverse breakdown voltage: ≥ 30V
    ️· Reverse capacitance: 0.75 pF
    ️· Available Packages: TO-71, Bare Die (contact Micross for dimensions)

    ## Absolute Maximum Ratings

    ️· Storage Temperature: -65°C to +200°C
    ️· Operating Junction Temperature: -55°C to +150°C
    ️· Maximum Power Dissipation: 300mW
    ️· Forward Current: 20mA
    ️· Reverse Current: 100µA
    ️· Reverse Voltage: 30V
    ️· Diode-to-Diode Voltage: ±50V

    ## Electrical Characteristics

    ️· Reverse Breakdown Voltage (BVR): 30V (at IR=1µA)
    ️· Forward Voltage (VF): 0.8 - 1.1V (at IF=10mA)
    ️· Reverse Leakage Current (IR): 0.1 pA (at VR=1V)
    ️· Differential Leakage Current (|IR1-IR2|): ≤ 3
    ️· Total Reverse Capacitance (Crss): 0.75 - 1pF (at VR=10V, f=1MHz)

    ## Benefits & Applications

    ️· Benefits: Negligible circuit leakage contribution, circuit transparency, simplicity of operation.
    ️· Applications:
    - Op Amp Input Protection
    - Multiplexer Overvoltage Protection
    - Sample & Hold Circuits (offset voltage reduction)

    ## Important Notes

    ️· Pins 3 & 5 of the TO-71 package must not be connected to any circuit node.
    ️· Contact Micross for full package and die dimensions.

    Part No.LSID101_TO-71
    ManufacturerMICROSS
    Size314 Kbytes
    Pages1 page
    DescriptionPICO-AMP DUAL DIODE
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