1. Overview:

️· The LS302 is a dual (likely matched pair) transistor designed for applications requiring matched characteristics.
️· It's notable for its high gain, tight VBE matching, and low output capacitance.

2. Key Features and Performance (Highlights):

️· Very High Gain: hFE ≥ 1000 at 1µA
️· Tight VBE Matching: VBE1 – VBE2 = 0.2mV (typical)
️· Low Output Capacitance: COBO ≤ 2.0pF
️· High ft (Transition Frequency): 100 MHz
️· Matched Pair: Likely designed to function as a matched pair for improved performance in sensitive circuits.

3. Absolute Maximum Ratings:

️· Storage Temperature: -65°C to +200°C
️· Junction Temperature: -55°C to +150°C
️· Continuous Power Dissipation: 250mW (single side), 500mW (both sides)
️· Derating: Power dissipation derates with temperature (see document for specific values).
️· Collector Current: 5mA

4. Electrical Characteristics (Typical @ 25°C):

️· VBE1 – VBE2: 0.2 mV
️· hFE (DC Current Gain): Ranges from 1000 to significantly higher, depending on the collector current.
️· VCE(sat): 0.5V
️· Other Parameters: Details for BVCBO, BVCEO, BVEBO, COBO, CC1C2, IC1C2, and ft are provided in the document.

5. Package and Availability:

️· Available in a DIP package.
️· Also available as a bare die.

6. Important Notes:

️· Maximum ratings should not be exceeded.
️· The reverse base-emitter voltage should not exceed 6.2V.
️· The reverse base-emitter current should not exceed 10µA.